Preparation and Electrical Properties of n-In0.35Ga0.65N/p-Si Heterojunction

Abstract

Abstract: InGaN film was deposited on p-Si substrate using a self-refited pulsed laser deposition (PLD) system with double laser light paths and two-component target. The microstructure of InGaN film and the electrical properties of n-InGaN/p-Si heterojunction were investigated. The results show that InGaN film exhibits a single crystal structure with [0001] preferred orientation.The surface of the film is smooth and dense, and the atomic content of In is 35%. The Hall effect measurements show that In_0.35Ga_0.65N film exhibits n-type characteristics with high carrier concentration, high mobility and low resistivity. The current-voltage (I-V) analysis shows that n-In_0.35Ga_0.65N/p-Si heterojunction has good rectification characteristics with the rectification ratio of 25 at ±4 V, and the open circuit voltage is 1.32 V. There exists two current transport mechanisms in n-In_0.35Ga_0.65N/p-Si heterojunction: thermally assisted carrier tunneling and recombination-tunneling mechanism. In addition, the reverse saturation current, barrier height and ideality factor of the heterojunction are 1.05×10^-8A, 0.86 eV, and 6.87, respectively.

Key words: pulsed laser deposition, n-In_0.35Ga_0.65N/p-Si heterojunction, InGaN film, rectification characteristic, semiconductor

CLC Number:

TN36

WANG Ting, ZHAO Hongli, GUO Shiwei, YAO Juan, LI Shuang, FU Yuechun, SHEN Xiaoming, HE Huan. Preparation and Electrical Properties of n-In_0.35Ga_0.65N/p-Si Heterojunction[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(3): 484-490.

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Preparation and Electrical Properties of n-In_0.35Ga_0.65N/p-Si Heterojunction

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