Effects of Different Annealing Conditions on the Characteristics of Ga2O3 Thin Films Prepared by PEALD

Abstract

Abstract: Gallium oxide (Ga₂O₃) thin films were prepared on c-plane sapphire substrates by plasma enhanced atomic layer deposition (PEALD). The effects of annealing atmosphere (v(N₂)∶v(O₂)=1∶1 (volume ratio), Air and N₂) and annealing time on the crystal structure, surface morphology and optical properties of Ga₂O₃ films were studied. The research results indicate that gallium oxide is in metastable state before annealing, and the crystal structure changes significantly after annealing in different annealing atmospheres, and the increase in the proportion of N₂ in annealing atmosphere is beneficial to the recrystallization of Ga₂O₃. Furthermore, the effect of annealing time was further studied under N₂ atmosphere, and the results show that the structure of the thin film changes from metastable state to β-Ga₂O₃ with good single orientation after annealing for 30 min in N₂ atmosphere. And the surface morphology analysis show that the surface morphology begins to stabilize after annealing for 30 min, and the surface grain density no longer increases. In addition, the average transmittance of the sample in the range of 400 nm to 800 nm is almost 100%, and the light absorption edge is steep. Annealing in N₂ atmosphere is more conducive to the migration of atoms on the surface of the film for Ga₂O₃ deposited in an oxygen-rich environment, and Ga₂O₃ recrystallization is preferred.

Key words: Ga₂O₃, annealing condition, PEALD, crystal structure, surface morphology, optical property

CLC Number:

O47
O484.4

MA Haixin, DING Guangyu, XING Yanhui, HAN Jun, ZHANG Yao, CUI Boyao, LIN Wenkui, YIN Haotian, HUANG Xingjie. Effects of Different Annealing Conditions on the Characteristics of Ga₂O₃ Thin Films Prepared by PEALD[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(5): 838-844.

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Effects of Different Annealing Conditions on the Characteristics of Ga₂O₃ Thin Films Prepared by PEALD

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