Effect of Post Annealing Atmosphere on β-Ga2O3 Thin Films Prepared by Magnetron Sputtering

Abstract

Abstract: In recent years, β-Ga₂O₃ has attracted more and more attention as a wide band gap semiconductor material. A large number of researchers all over the world have carried out a lot of studies in preparation, doping and etching of β-Ga₂O₃. Radio frequency magnetron sputtering is one of the most popular methods for preparing β-Ga₂O₃ thin film. And post annealing is usually used to improve the quality of the film. In this paper, effects of annealing temperature and annealing atmosphere on β-Ga₂O₃ thin films on C-plane sapphire substrate prepared by radio frequency magnetron sputtering were investigated. Testing results of XRD and AFM indicate that under nitrogen atmosphere, the quality of β-Ga₂O₃ films annealed at 1 000 ℃ is better. At the same temperature, oxygen atmosphere annealing is better than nitrogen atmosphere annealing to improve the crystallization properties and reduce the surface roughness of the films. And under oxygen atmosphere, the quality of films annealed at 1 000 ℃ is better than that annealed at 900 ℃.

Key words: wide band gap semiconductor, β-Ga₂O₃, radio frequency magnetron sputtering, annealing atmosphere, crystallization property, surface roughness

CLC Number:

O484
O47

JI Kaidi, GAO Cancan, YANG Fashun, XIONG Qian, MA Kui. Effect of Post Annealing Atmosphere on β-Ga₂O₃ Thin Films Prepared by Magnetron Sputtering[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(6): 1056-1061.

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Effect of Post Annealing Atmosphere on β-Ga₂O₃ Thin Films Prepared by Magnetron Sputtering

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