Growth and Radiation Detection Properties of Cs3Bi2I9 Crystal

Abstract

Abstract: The large size and high quality inorganic metal halide perovskite Cs₃Bi₂I₉(φ15 mm×50 mm) single crystal was successfully prepared by Bridgman method. The crystal belongs to the hexagonal system (P6₃/mmc) at room temperature and the parameters are a=b=0.840 nm, c=2.107 nm. The density of Cs₃Bi₂I₉ is 5.07 g/cm³ and the melting point is 632 ℃. The crystal was characterized by powder X-ray diffraction, UV-Vis-NIR diffuse reflectance spectra and I-V test. The device structure of Au/Cs₃Bi₂I₉/Au is constructed to measure the carrier ability of Cs₃Bi₂I₉ crystal by the time of flight (TOF) technique. The electron mobility of Cs₃Bi₂I₉ crystal is obtained approximately of 4.33 cm²·V^-1·s^-1. The carrier mobility life product (μτ) of Cs₃Bi₂I₉ crystal is obtained ~8.21×10^-5 cm²·V^-1 by the Hecht equation, with the energy resolution of 39% at 500 V.

Key words: Cs₃Bi₂I₉, radiation detection, crystal growth, metal halide perovskite, Bridgman method

CLC Number:

O782

SUN Qihao, HAO Yingying, ZHANG Xin, XIAO Bao, JIE Wanqi, XU Yadong. Growth and Radiation Detection Properties of Cs₃Bi₂I₉ Crystal[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(10): 1907-1912.

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Growth and Radiation Detection Properties of Cs₃Bi₂I₉ Crystal

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