Electron Transport Properties of ε-(AlxGa1-x)2O3/ε-Ga2O3 Heterojunction

Abstract

Abstract: Ga₂O₃is an emerging wide bandgap semiconductor with potential applications in power and RF electronic systems. Previous studies have focused on β-Ga₂O₃, and theoretical caculations have been made on the two-dimensional electronic gas(2DEG) in β-(Al_xGa_1-x)₂O₃/Ga₂O₃ heterojunction. In this paper, the effect of ε-(Al_xGa_1-x)₂O₃ as a potential barrier on the electron transport properties of ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ heterojunction was studied. Firstly, the structure and properties of ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ heterojunction are introduced. The charge density on the polarization surface caused by spontaneous polarization and piezoelectric polarization of ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ heterojunction and the effect of polarization on the concentration of 2DEG were analyzed and calculated. Then, the relationship between ε-(Al_xGa_1-x)₂O₃ barrier thickness and alloy disorder scattering, interface roughness scattering and polar optical phonon scattering were analyzed under different Al mole composition. Finally, it is concluded that the interface roughness scattering and polar optical phonon scattering have important effects on the electron transport properties of ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ heterojunction, and the alloy disorder scattering has little effect on the electron transport properties of ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ heterojunction. The electron mobility of 2DEG concentration, alloy disorder scattering, interface roughness scattering and polar optical phonon scattering are determined by the thickness of ε-(Al_xGa_1-x)₂O₃ barrier layer and the Al mole composition.

Key words: 2DEG concentration, electron mobility, ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ heterojunction, alloy disorder scattering, interface roughness scattering, polar optical phonon scattering

CLC Number:

BAI Yanan, LYU Yanwu. Electron Transport Properties of ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ Heterojunction[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(3): 441-449.

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Electron Transport Properties of ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ Heterojunction

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