Growth and Properties of 4 Inch β-Ga2O3 Single Crystal

Abstract

Abstract: 4 inch β-Ga₂O₃ single crystals were grown by edge-defined film-fed growth (EFG) method in this work. The crystalline phase, crystal quality, defects, optical and electrical properties were studied. The Laue diffraction patterns is distinct and consistent which conformed to the characteristic of β-Ga₂O₃. The full width at half maximum (FWHM) of rocking curve of (400) plane is 57.57″. The density of etch pit by chemical corrosion is 1.06×10⁴cm^-2. The ultraviolet cut-off edges of the (100) plane is 262.1 nm and the optical bandgap is 4.67 eV. The electron concentration of the unintentionally doped crystal measured by C-V test is 7.77×10¹⁶ cm^-3.

Key words: Ga₂O₃, wide-bandgap semiconductor, defect, crystal growth, EFG method, single crystal

CLC Number:

MU Wenxiang, JIA Zhitai, TAO Xutang. Growth and Properties of 4 Inch β-Ga₂O₃ Single Crystal[J]. Journal of Synthetic Crystals, 2022, 51(9-10): 1749-1754.

References

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Growth and Properties of 4 Inch β-Ga₂O₃ Single Crystal

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