Abstract: Interface models of diamond-coated cemented carbide tool WC-Co/SiC/Diamond with Co mass fraction of 6%, 8%, 10% and 12% were constructed. The influences of different deposition temperatures on the interface bonding strength were simulated with the molecular dynamics method, and the reasons were analyzed from perspectives of adhesion work and bond length distribution. The adhesion work analysis indicates that, compared with the other three Co content interface models, the two interfaces in WC-6%Co/SiC/Diamond interface model have the highest adhesion work values at seven deposition temperatures. At different deposition temperatures, both interfaces of WC-6%Co/SiC and SiC/Diamond in WC-6%Co/SiC/Diamond have the highest adhesion work values of 2.468 and 5.394 J/m² at 1 123 and 1 173 K, respectively. The analysis results of bond length distribution indicate that, at any deposition temperature, compared with the other three Co content interface models, the maximum value of the bond length distribution range at each interface of WC-6%Co/SiC/Diamond is smaller. The interface model obtained by sequentially depositing SiC layer on WC-6%Co substrate at 1 123 K and diamond coating on SiC layer at 1 173 K has the shortest interface bond length, the largest bond energy, and the best interface bonding property.

Key words: diamond-coated cemented carbide, WC-Co/SiC/Diamond, deposition temperature, Co content, interface adhesion work, interface bonding property, bond length