Performance of In3+ Doped Zn3Ga2Ge2O10∶Cr3+ Far-Red Light Emitting Materials for Plant Light Supplement

Abstract

Abstract: Cr³⁺ doped Zn₃Ga₂Ge₂O₁₀∶Cr³⁺ far-red phosphor was synthesized by the high temperature solid state method, and the luminescent properties of Zn₃Ga₂Ge₂O₁₀∶Cr³⁺ was tuned by introducing In³⁺. The crystal structure of Zn₃(Ga_1-xIn_x)₂Ge₂O₁₀∶2%Cr³⁺ was determined by X-ray diffraction(XRD), and the luminescent properties were analysed using room-temperature photoluminescence spectra and thermoluminescence spectra. Zn₃(Ga_1-xIn_x)₂Ge₂O₁₀∶2%Cr³⁺ exhibits a broad emission band, which is composed of two luminescent peaks at 705 and 721 nm from the transitions of ⁴T₂(⁴F)→⁴A₂ and ²E→⁴A₂ respectively. As the In³⁺ doping concentration increases, the emission spectrum of Zn₃(Ga_1-xIn_x)₂Ge₂O₁₀∶2%Cr³⁺ broadens. This broadening is attributed to the changes in the crystal field environment around the Cr³⁺, which leads to an increase in the full width at half maximum (FWHM) of the material's emission spectrum as the crystal field splitting becomes more pronounced. Therefore, Zn₃(Ga_1-xIn_x)₂Ge₂O₁₀∶2%Cr³⁺ phosphors are expected to be applied in the field of plant lighting for their luminescence characteristics matching with the absorption spectrum of phytochrome in plants. Additionally, as the In³⁺ doping concentration increases, the phosphor material exhibits a red long afterlow phenomenon, and its afterglow duration is related to the In³⁺ doping concentration.

Key words: phosphor, Zn₃Ga₂Ge₂O₁₀∶Cr³⁺, In³⁺ doping, far-red light, cation substitution, plant light supplement

CLC Number:

BAI Qiongyu, WANG Chunhao. Performance of In³⁺ Doped Zn₃Ga₂Ge₂O₁₀∶Cr³⁺ Far-Red Light Emitting Materials for Plant Light Supplement[J]. Journal of Synthetic Crystals, 2024, 53(9): 1568-1575.

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Performance of In³⁺ Doped Zn₃Ga₂Ge₂O₁₀∶Cr³⁺ Far-Red Light Emitting Materials for Plant Light Supplement

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