Abstract: In this work, large-size Fe-doped β-Ga₂O₃ single crystals were grown by Czochralski method. High quality 2 inch (1 inch=2.54 cm) (010) substrates were fabricated, and the crystal quality, processing quality and electrical properties of these substrates were studied. The uniform appearance of the substrates under the polarizing strain gauge indicates the absence of twinning, cracks and other macrocopic defects, confirming their good macrocrystalline quality. The full width at half maximum (FWHM) of the X-ray rocking curve of (020) plane for these substrates is less than 29.7″, reflecting good microcrystalline quality. The surface average roughness (Ra) of the substrates is less than 0.240 nm, with a local thickness variation (LTV) less than 1.769 μm, a total thickness variation (TTV) of 5.092 μm, and a warp of 3.132 μm, suggesting superior substrate processing quality. Furthermore, the electrical resistivity of the substrate is ~7×10¹¹ Ω·cm, facilitating the development of the microwave and radio frequency devices.

Key words: Ga₂O₃, wide-bandgap semiconductor, crystal growth, Czochralski method, single crystal substrate, doping