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JOURNAL OF SYNTHETIC CRYSTALS ›› 2024, Vol. 53 ›› Issue (11): 1829-1839.

Special Issue: 高功率激光用晶体和透明陶瓷

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Research Progress on High-Melting-Point Rare Earth Oxides Laser Crystals

REN Yongchun1, LI Jianda1, CAO Xiao1, HUANG Yi1, ZHANG Fan1, ZHANG Ning1, XUE Yanyan2, WANG Qingguo1, TANG Huili1, XU Xiaodong3, DONG Yongjun4, XU Jun1   

  1. 1. MOE Key Laboratory of Advanced Micro-Structured Materials, School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai 200092, China;
    2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
    3. School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China;
    4. Shanghai Core Feirui Technology Co., Ltd., Shanghai 200444, China
  • Received:2024-09-16 Online:2024-11-15 Published:2024-12-09

Abstract: High-melting-point rare earth oxides, due to their advantages of high thermal conductivity, high mechanical strength, low phonon energy, and high cation site density, exhibit characteristics such as large segregation coefficients, strong electron-phonon coupling, and multiple lattice sites. These properties have made them a hot topic of research in high-power, ultrafast, and infrared laser crystals. However, their high-melting-points, particularly for sesquioxides (~2 450 ℃), pose significant challenges for crystal growth. Though being reported decades ago, the development of sesquioxide crystals remains in its early stage. In recent years, breakthroughs in various crystal growth techniques have been achieved, leading to a diversification of rare earth ion-doped laser research. This paper reviews the advantages of high-melting-point rare earth oxides, recent advancements in crystal growth, and the progress in laser performance across the infrared 1, 2 and 3 μm wavelength bands.

Key words: laser crystal, rare earth oxide, sesquioxide, high-melting-point, ultrafast laser, crystal growth

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