Growth of α-Ga2O3 on Different Plane of Sapphire Substrate by Mist-CVD Method

doi:10.16553/j.cnki.issn1000-985x.2024.0273

Abstract

Abstract: α-Ga₂O₃ heteroepitaxial thin films on sapphire substrates with different crystal planes were prepared by mist-chemical vapor deposition (Mist-CVD) technique. The phase, optical properties and surface morphology of the samples were investigated by XRD, SEM and UV-Vis. The temperature windows for growing pure phase α-Ga₂O₃ thin films on C, M, A and R-plane sapphire substrates within 600 ℃ are 420~480, 480~550, 590~600 and 540~600 ℃, and optical band gaps of the pure phase α-Ga₂O₃ thin film are 5.12, 5.23, 5.25 and 5.21 eV, respectively. Compared to C-plane sapphire substrates, epitaxial α-Ga₂O₃ thin films on M, A and R-plane sapphire substrates require higher growth temperatures, and the bandgap width of the films obtained on M, A and R-plane sapphire substrates are larger. The SEM results of the sample surface show significant differences in the surface morphology of α-Ga₂O₃ thin films with different crystal planes, and there is a "continuous layer+large island" structure on the α-Ga₂O₃ thin film grown on C-plane sapphire substrate. The study of epitaxial α-Ga₂O₃ thin films on sapphire substrates with different crystal planes in this article provide valuable reference for the application of α-Ga₂O₃ materials.

Key words: α-Ga₂O₃, sapphire substrate, Mist-CVD, heteroepitaxial, growth temperature, band gap

CLC Number:

TN304.055

LI Xiongjie, NING Pingfan, CHEN Shiao, QIAO Sibo, CHENG Hongjuan, WANG Yingmin, NIU Pingjuan. Growth of α-Ga₂O₃ on Different Plane of Sapphire Substrate by Mist-CVD Method[J]. Journal of Synthetic Crystals, 2025, 54(2): 255-262.

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Growth of α-Ga₂O₃ on Different Plane of Sapphire Substrate by Mist-CVD Method

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