Research Progress and Prospects of Diamond n-Type Doping

doi:10.16553/j.cnki.issn1000-985x.2025.0200

Abstract

Abstract: Diamond is a typical representative of ultra-wide bandgap semiconductors. Theoretically， it has the advantages of a large bandgap， extremely high thermal conductivity， and high carrier mobility， making it an ideal material for high-frequency， high-power， and high-temperature electronic devices. Achieving efficient and stable semiconductor doping is an inevitable requirement for the application of diamond semiconductor electronic devices. Currently， through surface modification methods such as hydrogen termination/silicon termination and boron doping， diamond has achieved relatively excellent p-type doping， and p-type devices have also continuously made new breakthroughs. However， suitable dopants or material modification methods for diamond n-type semiconductor doping have not yet been found， and it still faces problems such as low doping efficiency， high activation energy， and difficult material growth. This paper systematically reviews the research progress at home and abroad on achieving n-type semiconductor doping in diamond through single-element doping and multi-element co-doping methods， analyzes the advantages and disadvantages of various doping schemes， and looks forward to the development prospects of diamond n-type doping， hoping to provide a reference for solving the problem of diamond n-type semiconductor doping.

Key words: diamond; n-type semiconductor; single-element doping; co-doping; activation energy

CLC Number:

TN304

YOU Zhipeng, REN Zeyang, ZHANG Jinfeng, HAO Yue, ZHANG Jincheng. Research Progress and Prospects of Diamond n-Type Doping[J]. Journal of Synthetic Crystals, 2026, 55(3): 340-348.

Figures/Tables 4

References 68

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Physical property	Unit	Si	Si-4H	GaN	Ga₂O₃	Diamond	AlN
Bandgap	eV	1.1	3.23	3.42	4.8	5.47	6.2
Breakdown electric field	MV/cm	0.3	3	2	8	10	2.1
Electron mobility	cm²/（V·s）	1 500	1 000	2 000	300	4 500	426
Hole mobility	cm²/（V·s）	480	100	20	—	3 800	141
Thermal conductivity	W/（m·K）	150	500	150	27	2 200	321
Dielectric constant	ε	11.8	9.7	9	10	5.7	8.87

Physical property	Unit	Si	Si-4H	GaN	Ga₂O₃	Diamond	AlN
Bandgap	eV	1.1	3.23	3.42	4.8	5.47	6.2
Breakdown electric field	MV/cm	0.3	3	2	8	10	2.1
Electron mobility	cm²/（V·s）	1 500	1 000	2 000	300	4 500	426
Hole mobility	cm²/（V·s）	480	100	20	—	3 800	141
Thermal conductivity	W/（m·K）	150	500	150	27	2 200	321
Dielectric constant	ε	11.8	9.7	9	10	5.7	8.87