Status and Prospects of Industrialization of Ultra-Wide Bandgap Semiconductorβ-Ga2O3

doi:10.16553/j.cnki.issn1000-985x.2026.0088

Abstract

Abstract: The ultra-wide band gap semiconductor material β-phase gallium oxide （β-Ga₂O₃）， with its ultra-wide band gap （4.8~4.9 eV）， high breakdown field strength （8 MV/cm） and excellent Baliga figure of merit （>3 000）， has shown great application potential in high-voltage and high-power fields such as smart grids， new energy vehicles and rail transit. In recent years， the research on β-Ga₂O₃ has made breakthroughs in many technical fields， and its industrialization process is at a critical stage of transition from laboratory research and development to large-scale production. From the perspective of industrialization， this article systematically sorts out and summarizes the development trend of the whole industrial chain of β-Ga₂O₃， and provides an important reference for industry practitioners to accurately grasp the pace of industrialization of β-Ga₂O₃. Firstly， the mainstream technology path in the whole industrial chain of β-Ga₂O₃ is briefly introduced. Subsequently， the current industrial development status of β-Ga₂O₃ is elaborated in detail around the three core links of “single crystal-epitaxy-device”， and the challenges faced by β-Ga₂O₃ in p-type doping， thermal management， reliability verification and cost control are comprehensively analyzed， as well as the efforts of researchers to solve these problems. Finally， the potential applications of β-Ga₂O₃ power devices in the fields of new energy vehicles， photovoltaic inverters， data center power supplies and high voltage direct current transmission are deeply analyzed， and the future market development prospects are forecasted， in order to provide reference for the industrialization and coordinated development of β-Ga₂O₃ related fields.

Key words: ultra-wide bandgap semiconductor; β-Ga₂O₃; crystal growth; film epitaxy; power device; industrialization

CLC Number:

QI Hongji, CHOU Tashun. Status and Prospects of Industrialization of Ultra-Wide Bandgap Semiconductorβ-Ga₂O₃[J]. Journal of Synthetic Crystals, 2026, 55(8): 1231-1251.

Figures/Tables 19

Fig.1 Flow chart of β-Ga2O3 industrial chain

Table 1 Comparison of different growth techniques for β -Ga2O3 single crystals

生长方法	晶体尺寸	坩埚材料	缺陷密度	产业化程度	成本
EFG	6 inch	铱（可多次使用）	中等	高（主流）	高
VB	12 inch	铂铑合金（单次使用）	低	中等（快速崛起）	中等
VGF	2 inch	铱	低	低	高
Casting	8 inch	铱（用量少）	中等	中等	中等
Cz	2 inch	铱（可多次使用）	低	低	高
OCCC	2 inch	水冷铜篮	中等	低	低
DG	95 mm	无铱坩埚	待验证	研发阶段	低

Table 2 Comparison of different epitaxial techniques for β -Ga2O3 films

优势：效率高，适合厚膜制备

劣势：表面粗糙，需抛光处理

优势：均匀性好、掺杂控制精准

劣势：前驱体成本较高

优势：界面与外延层质量高

劣势：设备昂贵、产能低

低

Fig.2 β-Ga2O3 crystals grown by NCT［27］ and FUJIA GALLIUM［11］ using the EFG and VB method

Fig.3 8-inch β-Ga2O3 crystal grown by the casting method［12］

Fig.4 A β-Ga2O3 crystal grown by the Cz method［34］

Fig.5 A β-Ga2O3 crystal grown by the DG method［38］

Fig.6 “One-touch crystal growth” equipment of FUJIA GALLIUM

Fig.7 Film thickness distribution of β-Ga2O3 on a 6-inch test wafer［10］

Fig.8 DC output characteristic curves of β-Ga2O3 MOSFET lateral power devices［56］

Fig.9 Schematic diagrams of typical β-Ga2O3 SBD terminal structure［59，61，64?71］

Fig.10 Typical ampere level β-Ga2O3 diode devices［72?76］

Fig.11 Typical enhanced β-Ga2O3 vertical MOSFET structures［79，81?87］

Fig.12 Lateral MOSFET structural design and I-V curves of Hubei Jiufengshan laboratory［89］

Fig.13 Performance results of devices based on MOCVD epitaxial wafers and 6-inch tape-out［92］

Fig.14 Band structure diagram of β-Ga2O3［49］

Fig.15 Mechanism diagram of N-doped p-type β-Ga2O3［94］

Fig.16 Schematic diagrams of thermal management for β-Ga2O3 devices［98，100］

Fig.17 Reliability verification contents for power devices

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Status and Prospects of Industrialization of Ultra-Wide Bandgap Semiconductorβ-Ga₂O₃

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