Table of Content

15 February 1998, Volume 27 Issue 2

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Theoretical Predication on Vapor Growth Conditions of Low Pressure Diamond Films

Wan Yongzhong;Zhang Wei;Liu Zhijie;Wang Jitao

1998, 27(2):  109-113. 

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Cr:LiCAF Crystal Grown by Bridgman Method and Its Flashlamp-pumped Laser Properties

Fang Zhenyi;Huang Chaoen;Xu Chuan;Song Yinglan;Hu Yonglan;Shi Ruize

1998, 27(2):  114-117. 

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Study on Holographic Memory Properties of Eu∶Zn∶LiNbO3 Crystal

Zhao Yequan;Xu Wusheng;Yan Chunhui;Xu Yanling;Xu Yuheng;Wan Jiyang

1998, 27(2):  118-121. 

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Study on the Surface Microtopographic Patterns of Synthetic Diamond Crystals

He Xiaohong;Chu Weiguang;He Linna

1998, 27(2):  122-125. 

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Study on Defects in the Surface of CVD Diamond Films

Zhou Lingping;Jin Jiucheng;Li Shaolu;Yan Yonghong;Zhu Zhenghua

1998, 27(2):  126-131. 

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Laser Ultrasonic Study on Acoustic Character of CVD Diamond

Pan Yongdong;Qian Menglu;Hou Li;Liu Erkai

1998, 27(2):  132-136. 

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Heteroepitaxial Diamond Films Growth on Si(100) by Emission Electron Via Hot Filament CVD

Liao Kejun;Wang Wanlu

1998, 27(2):  137-140. 

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Response of Interface Velocity to the Traction Rate during Directional Solidification

Cai Yingwen;Yu Lu;Xu Zhenming;Li Jianguo;Fu Hengzhi

1998, 27(2):  141-145. 

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Micro Observation and Analysis on Inclusions in PbF2 Crystal

Ren Guohao;Shen Dingzhong;Wang Shaohua;Yin Zhiwen

1998, 27(2):  146-151. 

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Study of the Influence of Annealing Temperature on Luminescence Characteristics of the Er3+ Ions in InP Crystal

Zhang Xitian;Wang Yuxi

1998, 27(2):  152-155. 

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Phase Structure and Properties of SiC Bonded Polycrystalline Diamond Toughed with ZrO2 (Y2O3)

Zang Jianbing;Wang Mingzhi;Wang Yanhui

1998, 27(2):  156-159. 

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On the Formation of Nodular Silicon Crystal in the Zn-Al-Alloy Matrix Composites Reinforced by Silicon Phase

Zhao Haofeng;Wang Xudong

1998, 27(2):  160-163. 

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Mechanism Studies of Molten Catalytic Spheres on Synthesizing β-SiCw

Guan Yingfu;Guo Mengxiong

1998, 27(2):  164-168. 

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Effect of High Cold Deformation on Crystallization of Electroless Plated Amorphous Ni-Sn-P Alloy

Yu Jinku;Feng Hao;Xing Guangzhong;Shao Guangjie;Shen Dejiu;Wang Yulin

1998, 27(2):  169-172. 

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Studies on the Effect of Medium on the Growth of TGFB Crystal

Yan Zhiying;Bao Ciguang;Yang Zonglu

1998, 27(2):  173-177. 

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Raw Material Synthesis of Yttrium Vanadate Crystals (Nd3+∶YVO4∶YVO4)

Wei Min;Li Gansheng;Zhu Yuemei;Wu Xiquan;Yu Zhensen;Teng Shuo

1998, 27(2):  178-181. 

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Determination of Crystal Structure of Sapphire Single Crystal Grown by EFG Method by TEM Selected Area Diffraction

Ma Shengli;Lou Zhengxin;Jing Xiaotian

1998, 27(2):  182-184. 

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Research on the Computer Temperature Control System for Flux Crystal Growth

Zhou Yiqi;Zhang Jianchuan;Pan Hengfu;Liu Yaogang;Wei Jingqian;Wang Jiyang

1998, 27(2):  185-190. 

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Tin Solution Growth and the Analysis of Single Crystals of CuSi2P3 Semiconductor

M.S.OMAR

1998, 27(2):  191. 

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Single crystals of CuSi2P3 as long as 1cm has been grown by using tin solution growth. X-ray powder photography technique showed that only CuSi2P3 can grow as a pure material without any exchanges of Si with Sn. The structure is in the form of Fcc with a lattice parameters of a=0.5248nm. Electron probemicro anaiysis (EPMA) has supported the X-ray data in regarding the single phase of this compound grown by solution growth.