Tin Solution Growth and the Analysis of Single Crystals of CuSi2P3 Semiconductor

Abstract

Abstract: Single crystals of CuSi2P3 as long as 1cm has been grown by using tin solution growth. X-ray powder photography technique showed that only CuSi2P3 can grow as a pure material without any exchanges of Si with Sn. The structure is in the form of Fcc with a lattice parameters of a=0.5248nm. Electron probemicro anaiysis (EPMA) has supported the X-ray data in regarding the single phase of this compound grown by solution growth.

Key words: Single crystals of CuSi2P3 as long as 1cm has been grown by using tin solution growth. X-ray powder photography technique showed that only CuSi2P3 can grow as a pure material without any exchanges of Si with Sn. The structure is in the form of Fcc with a lattice parameters of a=0.5248nm. Electron probemicro anaiysis (EPMA) has supported the X-ray data in regarding the single phase of this compound grown by solution growth.

CLC Number:

M.S.OMAR. Tin Solution Growth and the Analysis of Single Crystals of CuSi2P3 Semiconductor[J]. Journal of Synthetic Crystals, 1998, 27(2): 191-.

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Tin Solution Growth and the Analysis of Single Crystals of CuSi2P3 Semiconductor

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