3~4英寸Fe掺高阻β-Ga2O3单晶的制备及其性能研究

doi:10.16553/j.cnki.issn1000-985x.2025.0010

人工晶体学报 ›› 2025, Vol. 54 ›› Issue (3): 407-413.DOI: 10.16553/j.cnki.issn1000-985x.2025.0010

• 晶体生长、掺杂和缺陷 • 上一篇下一篇

3~4英寸Fe掺高阻β-Ga₂O₃单晶的制备及其性能研究

霍晓青, 张胜男, 周金杰, 王英民, 程红娟, 孙启升

中国电子科技集团公司第四十六研究所,新型半导体晶体材料技术重点实验室,天津 300220

收稿日期:2025-01-13 出版日期:2025-03-15 发布日期:2025-04-03
通信作者: 程红娟,教授。E-mail:xiemn08@126.com; 程红娟,中国电子科技集团公司第四十六研究所新材料研发中心副主任,正高级工程师。《人工晶体学报》青年编委。主要从事硫化镉、氮化铝等新型半导体单晶材料研制工作。主持并参与国家863、国防973、国家重点研发计划、基础科研重大等各类科研项目20余项,先后获省部级奖项9次,发表科技论文10余篇,授权国家专利20余件。
作者简介:霍晓青(1986—),女,河北省人,博士研究生,高级工程师。E-mail:huoyang66@163.com

Preparation and Properties of 3~4 Inch Fe Doped β-Ga₂O₃ Single Crystal with High Resistance

HUO Xiaoqing, ZHANG Shengnan, ZHOU Jinjie, WANG Yingmin, CHENG Hongjuan, SUN Qisheng

CETC Key Laboratory of Advanced Semiconductor Crystal Materials and Technologies, The 46th Research Institute, CETC, Tianjin 300220, China

Received:2025-01-13 Online:2025-03-15 Published:2025-04-03

摘要/Abstract

摘要： 超宽禁带半导体β-Ga₂O₃单晶以优异的耐高压性能和低成本的潜力,引起了研究者的广泛关注。本文采用导模法生长出了3~4英寸(1英寸=2.54 cm)Fe掺β-Ga₂O₃单晶,长度最大可达270 mm,一块晶坯可以获得多块大尺寸氧化镓单晶,有效降低了晶体生长成本。对生长晶体的电学、光学和高分辨X射线衍射半峰全宽等性能参数进行了测试分析,数据表明晶片电学、光学和XRD半峰全宽一致性佳,晶体质量优异。对系列Fe掺杂β-Ga₂O₃单晶进行了性能研究,分析了Fe元素对β-Ga₂O₃单晶质量、带隙、晶格振动的影响。研究发现,不同Fe掺杂β-Ga₂O₃单晶的结晶质量佳,Fe元素可使β-Ga₂O₃单晶的带隙变宽,同时Fe掺杂使β-Ga₂O₃单晶产生了轻微的拉伸应力。本文研究为衬底外延和器件验证提供数据支撑。

关键词: β-Ga₂O₃单晶, 电阻率, 透过率, Raman光谱, XRD半峰全宽

Abstract: Ultra-wide bandgap semiconductor β-Ga₂O₃ single crystal, which has excellent high breakdown field and low-cost potential, has attracted extensive attention from researchers. In this paper, 3~4 inch (1 inch=2.54 cm) Fe-doped β-Ga₂O₃ single crystals were grown by edge-defined film-fed growth method, the maximum length of which is 270 mm. A single crystals ingot could be cut to several bulk crystals with the large size, which effectively reduced the crystal growth cost. The electrical, optical and high-resolution X-ray diffraction full width at half maximum of the grown crystals were tested and analyzed. The data indicates good consistency in the electrical, optical, and XRD full width at half maximum of the wafers, demonstrating excellent crystal quality. Furthermore, the performance of a series of Fe-doped β-Ga₂O₃ single crystals were studied to analyze the influence of the Fe element on the quality, band gap and lattice vibration of β-Ga₂O₃ single crystals. It is found that, all the Fe-doped β-Ga₂O₃ single crystals have good crystalline quality. Fe doping can widen the bandgap of β-Ga₂O₃ single crystals, and meanwhile, induce a slight tensile stress in β-Ga₂O₃ single crystals. This paper will provide data support for substrate epitaxy and device verification.

Key words: β-Ga₂O₃ single crystal, resistivity, transmittance, Raman spectrum, XRD full width at half maximum

中图分类号:

O782

霍晓青, 张胜男, 周金杰, 王英民, 程红娟, 孙启升. 3~4英寸Fe掺高阻β-Ga₂O₃单晶的制备及其性能研究[J]. 人工晶体学报, 2025, 54(3): 407-413.

HUO Xiaoqing, ZHANG Shengnan, ZHOU Jinjie, WANG Yingmin, CHENG Hongjuan, SUN Qisheng. Preparation and Properties of 3~4 Inch Fe Doped β-Ga₂O₃ Single Crystal with High Resistance[J]. Journal of Synthetic Crystals, 2025, 54(3): 407-413.

参考文献

[1] ZHA X H, WAN Y X, LI S, et al. Rhodium-alloyed beta gallium oxide materials: new type ternary ultra-wide bandgap semiconductors[J]. Advanced Electronic Materials, 2025, 11(1): 2570002.
[2] FU B, MU W X, ZHANG J, et al. A study on the technical improvement and the crystalline quality optimization of columnar β-Ga₂O₃ crystal growth by an EFG method[J]. CrystEngComm, 2020, 22(30): 5060-5066.
[3] OISHI T, KOGA Y, HARADA K, et al. High-mobility β- Ga₂O₃(-201) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact[J]. Applied Physics Express, 2015, 8(3): 031101.
[4] HE Q M, MU W X, DONG H, et al. Schottky barrier diode based on β-Ga₂O₃ (100) single crystal substrate and its temperature-dependent electrical characteristics[J]. Applied Physics Letters, 2017, 110(9): 093503.
[5] KURAMATA A, KOSHI K, WATANABE S, et al. High-quality β-Ga₂O₃ single crystals grown by edge-defined film-fed growth[J]. Japanese Journal of Applied Physics, 2016, 55(12): 1202A2.
[6] KURAMATA A, KOSHI K, WATANABE S, et al. Bulk crystal growth of Ga₂O₃[C]//Oxide-based Materials and Devices IX. January 27-February 1, 2018. San Francisco, USA. SPIE, 20188, 10533: 105330E.
[7] PEARTON S J, YANG J C, CARY P H, et al. A review of Ga₂O₃ materials, processing, and devices[J]. Applied Physics Reviews, 2018, 5(1): 011301.
[8] ZHANG J Y, SHI J L, QI D C, et al. Recent progress on the electronic structure, defect, and doping properties of Ga₂O₃[J]. APL Materials, 2020, 8(2): 020906.
[9] WANG Z P, CHEN X H, REN F F, et al. Deep-level defects in gallium oxide[J]. Journal of Physics D Applied Physics, 2021, 54(4): 043002.
[10] GALAZKA Z, GANSCHOW S, FIEDLER A, et al. Doping of Czochralski-grown bulk β-Ga₂O₃ single crystals with Cr, Ce and Al[J]. Journal of Crystal Growth, 2018, 486: 82-90.
[11] GALAZKA Z, SCHEWSKI R, IRMSCHER K, et al. Bulk β-Ga₂O₃ single crystals doped with Ce, Ce+Si, Ce+Al, and Ce+Al+Si for detection of nuclear radiation[J]. Journal of Alloys and Compounds, 2020, 818: 152842.
[12] GALAZKA Z, IRMSCHER K, SCHEWSKI R, et al. Czochralski-grown bulk β-Ga₂O₃ single crystals doped with mono-, di-, tri-, and tetravalent ions[J]. Journal of Crystal Growth, 2020, 529: 125297.
[13] HANY I, YANG G, CHUNG C C. Fast X-ray detectors based on bulk β-Ga₂O₃ (Fe)[J]. Journal of Materials Science, 2020, 55(22): 9461-9469.
[14] INGEBRIGTSEN M E, VARLEY J B, KUZNETSOV A Y, et al. Iron and intrinsic deep level states in Ga₂O₃[J]. Applied Physics Letters, 2018, 112(4): 042104.
[15] HE H, LI W, XING H Z, et al. First principles study on the electronic properties of Cr, Fe, Mn and Ni doped β-Ga₂O₃[J]. Advanced Materials Research, 2012, 535/536/537: 36-41.
[16] ZENG H, WU M, GAO H X, et al. Role of native defects in Fe-doped β-Ga₂O₃[J]. Materials, 2023, 16(20): 6758.
[17] ZHANG K, XU Z W, ZHAO J L, et al. Temperature-dependent Raman and photoluminescence of β-Ga₂O₃ doped with shallow donors and deep acceptors impurities[J]. Journal of Alloys and Compounds, 2021, 881: 160665.
[18] NOMURA T, OKUMURA K, MIYAKE H, et al. AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE[J]. Journal of Crystal Growth, 2012, 350(1): 69-71.

3~4英寸Fe掺高阻β-Ga₂O₃单晶的制备及其性能研究

Preparation and Properties of 3~4 Inch Fe Doped β-Ga₂O₃ Single Crystal with High Resistance

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

编辑推荐

Metrics

本文评价

[1]	初学峰, 黄林茂, 张祺, 谢意含, 胡小军. 铟锡氧(ITO)和氟锡氧(FTO)透明导电薄膜的表征与分析[J]. 人工晶体学报, 2024, 53(5): 848-854.
[2]	甘世雁, 梅炳初, 李威威. Er,Na:CaF₂透明陶瓷的制备与光谱性能研究[J]. 人工晶体学报, 2024, 53(12): 2059-2065.
[3]	吴文杰, 何代华, 程思远, 何夕云. PLZT透明陶瓷的微区组分调控及梯度设计与电光性能研究[J]. 人工晶体学报, 2024, 53(11): 1956-1963.
[4]	刘作冬, 潘其悦, 刘瑞, 曹悦, 李思雅, 王嘉顺, 于永生, 刘鹏, 井强山. Y³⁺∶CaF₂透明陶瓷的制备及其显微结构研究[J]. 人工晶体学报, 2024, 53(11): 1997-2003.
[5]	周霖涛, 赵涛, 孙志刚, 姜林文, 潘尚可, 潘建国, 郑燕青. 坩埚下降法生长2英寸镱掺杂钙铌镓石榴石单晶[J]. 人工晶体学报, 2024, 53(10): 1669-1674.
[6]	韩笋, 李艳. VO₂-SiO₂复合薄膜的激光诱导损伤特性研究[J]. 人工晶体学报, 2024, 53(10): 1738-1744.
[7]	孟佳源, 李毅, 赵裕春, 武浩荣, 汪雪松, 骆婉君, 虞澜. Mg掺杂增强CuCrO₂陶瓷的电传导及各向异性[J]. 人工晶体学报, 2024, 53(1): 163-169.
[8]	耿方娟, 杨磊, 朱嘉琦. 退火方式及温度对层层碘化法CuI薄膜结构、形貌和光电性能的影响[J]. 人工晶体学报, 2023, 52(5): 842-848.
[9]	赵小玻, 韦中华, 张旭, 钱纁, 于浩海. 化学气相沉积ZnS、ZnSe研究进展[J]. 人工晶体学报, 2023, 52(12): 2125-2134.
[10]	石爽爽, 王国影, 肖亚波, 王海丽, 陈建荣. CLBO单晶生长及性能研究[J]. 人工晶体学报, 2023, 52(12): 2146-2150.
[11]	赵鹏, 宋建军, 张微, 承刚, 张立生, 付春雷, 石刚, 黄存新. 泡生法制备低吸收蓝宝石晶体及其性能研究[J]. 人工晶体学报, 2023, 52(12): 2203-2209.
[12]	王颖, 张微, 田庭燕, 黄存新, 王震, 陈建荣, 石爽爽. AlON透明陶瓷的制备及其力学性能研究[J]. 人工晶体学报, 2023, 52(12): 2215-2221.
[13]	崔洪梅, 张旭, 陈琳, 苏健, 宋雷, 马天翼, 钱纁, 韦中华. 元素级ZnS高温性能研究[J]. 人工晶体学报, 2023, 52(12): 2222-2227.
[14]	力茂林, 徐悟生, 张斌, 田东升, 尹祖荣, 张镇玺, 贾永超, 徐朝鹏. 大尺寸掺铊碘化钠晶体生长及闪烁性能[J]. 人工晶体学报, 2023, 52(1): 17-24.
[15]	杨祥龙, 陈秀芳, 谢雪健, 彭燕, 于国建, 胡小波, 王垚浩, 徐现刚. 8英寸导电型4H-SiC单晶的生长[J]. 人工晶体学报, 2022, 51(9-10): 1745-1748.