关键词: 晶体生长;SiC;传热

Abstract: A heat transfer analysis for PVT growth of SiC was performed to optimize the growth conditions, aiming at obtaining better quality crystals. The analysis was focused on the heat transfer between the furnace lid and the crucible lid to which the seed was attached. It was found that the thermal shielding condition above the crucible lid, i.e. the hole shape and size in the graphite felt, plays an important role in determining the temperature uniformity on the crucible lid. The total radiation resistance and the heat transfer amount between the crucible lid and the furnace lid can be calculated using the simplified model presented in this paper for different positions of the crucible and different shapes and diameters of the hole in the graphite felt. The factors affecting the heat transfer amount between the crucible lid and the furnace lid were discussed. Besides, the feasibility of dynamic modification of the heat transfer conditions of the crucible lid was discussed.