关键词: MOCVD;ZnO薄膜;B掺杂;太阳电池

Abstract: Transparent conductive boron-doped zinc oxide (ZnO:B) films with plane surface have been deposited on glass substrates by metal organic chemical vapor deposition, using diethylzinc (DEZn) and water as reactant the gases and diborane (B2H6) as the n-type dopant gas. The structural, electrical and optical properties of films grown at 403 K were investigated as a function of B2H6 flow rates (0 ～ 10 sccm). X-ray diffraction spectra (XRD) and scanning electron microscopy (SEM) images indicated these films oriented in the [002] crystallographic direction are with regular and uniformly smooth surfaces and the grain size of the films are smaller ( ～ 15 nm at 10 sccm) that of the undoped sample. Atomic force microscopy (AFM) also revealed that the ZnO:B film (at 10 sccm) was nanostructured and with a surface roughness of ～ 5 nm. The lowest resistivity for the ZnO : B films was about 5.7 × 10-3 Ω · cm. These as-grown ZnO films at different B2H6 flow rates exhibited a high transmittance ( ～ 82; -97; ) in the range of 400-900 nm with a thickness of ～ 1150 nm. The optical absorption edge was shown to shift to higher photon energy with increasing electron concentration, following the Burnstein-Moss law.