关键词: 碱金属;射频磁控溅射;ZnO薄膜;光致发光

Abstract: The compounds of ZnXO (X=Li, Na and K) were prepared by a convention solid reaction method and the highly c-axis oriented ZnXO (X=Li, Na and K) thin films were deposited on Si (111) substrates by magnetron sputtering method. The structures,surface morphology and the luminescent properties of thin films were measured by X-ray diffraction(XRD), atomic force microscopes(AFM) and photoluminescence(PL).The results indicated that the ZnXO thin films show good c-axis orientation. Different PL spectra were acquired at room temperature using xenon lamps as excitation light sources, with excitation wavelengths of 325 nm. The UV peaks and violet peaks were found to originate from free excition radiation recombination and the PL intensity was related to crystalline quality, and the blue-green peaks may be related to the zinc and oxygen vacancies. The physical mechanism was disscussed throngh which the red shift of UV PL peaks.