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人工晶体学报 ›› 2009, Vol. 38 ›› Issue (6): 1485-1488.

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In掺杂对化学共沉淀法合成的SnO_2粉体Zeta电位的影响

胡学兵;周健儿;徐小勇;汪永清;张小珍   

  1. 景德镇陶瓷学院江西省高等学校无机膜重点实验室,景德镇,333001;萍乡高等专科学校,萍乡,337055
  • 出版日期:2009-12-15 发布日期:2021-01-20
  • 基金资助:
    Program of Natural Science Foundation of Jiangxi Province(2007GZC0799);Program of Educational Committee of Jiangxi Province([2005]322;[2006]309)

Effect of In Doping on Zeta Potentials of Tin Oxide Powders Synthesized by Chemical Coprecipitation Method

HU Xue-bing;ZHOU Jian-er;XU Xiao-yong;WANG Yong-qing;ZHANG Xiao-zhen   

  • Online:2009-12-15 Published:2021-01-20

摘要: 以四氯化锡、三氯化铟和氨水为原料,采用化学共沉淀法制备了In掺杂SnO_2粉体.实验采用XRD和Zeta电位分析仪对In掺杂SnO_2粉体的物化性能进行了研究.结果表明:当In掺杂浓度为2 mol;时,掺杂SnO_2粉体具有较低的Zeta电位.相对于纯SnO_2粉体,In掺杂改变了SnO_2的晶胞参数并增大了其晶胞体积.

关键词: SnO_2粉体;In掺杂;Zeta电位;晶胞体积

Abstract: In-doped tin oxide powders were prepared by a chemical coprecipitation process using tin tetrachloride, indium trichloride and ammonia as raw materials. The properties of SnO_2-based powders doped with In were studied systematically by X-ray diffraction (XRD) and Zeta potential analyzer. The results showed Zeta potential of In-doped SnO_2 powders is the lowest when the fraction of In-doped is 2 mol;. Compared with the pure SnO_2, the presence of the dopant alters slightly the crystal cell parameter of SnO_2 and increases significantly its crystal cell volume.

Key words: In-doped tin oxide powders were prepared by a chemical coprecipitation process using tin tetrachloride, indium trichloride and ammonia as raw materials. The properties of SnO_2-based powders doped with In were studied systematically by X-ray diffraction (XRD) and Zeta potential analyzer. The results showed Zeta potential of In-doped SnO_2 powders is the lowest when the fraction of In-doped is 2 mol;. Compared with the pure SnO_2, the presence of the dopant alters slightly the crystal cell parameter of SnO_2 and increases significantly its crystal cell volume.

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