关键词: 溅射功率;磁控溅射;ZnO:Al,Cr薄膜

Abstract: A series of ZnO thin films doped with aluminum and chromium were deposited on glass substrates at room temperature by direct current magnetron sputtering. The influence of sputtering power (55-130 W)on the structure, residual stress,surface morphology,photoelectric properties of the films were studied. The results indicated that as the sputtering power increasing, the crystalline structure of the films improved, the ZnO (002) preferred orientation enhanced. The lattice constant, the compressive stress and electrical resistivity decreases gradually as the sputtering power increasing. The lowest The optical band gap was found to be 3.39 eV for 55 W and it increases to 3.45 eV for 130 W. The UVvis transmittance spectrum revealed that the films show a high average transmittance of above 89; in the visible range.

Key words: A series of ZnO thin films doped with aluminum and chromium were deposited on glass substrates at room temperature by direct current magnetron sputtering. The influence of sputtering power (55-130 W)on the structure, residual stress,surface morphology,photoelectric properties of the films were studied. The results indicated that as the sputtering power increasing, the crystalline structure of the films improved, the ZnO (002) preferred orientation enhanced. The lattice constant, the compressive stress and electrical resistivity decreases gradually as the sputtering power increasing. The lowest The optical band gap was found to be 3.39 eV for 55 W and it increases to 3.45 eV for 130 W. The UVvis transmittance spectrum revealed that the films show a high average transmittance of above 89; in the visible range.