关键词: 反应离子刻蚀(RIE);纳米凹坑绒面;反射率;SiNx膜沉积

Abstract: The experiment was based on ( Reaction Ion Eatching ) RIE technology to prepare polycrystalline silicon wafer with nano scale , the surface texture structure can obviously reduce the reflectivity and improve the short-circuit current of crystalline silicon cells .The experiment specifically refers to the etching of polysilicon wafers in the same mixed acid solution to remove surface damage , and used RIE technology to make texture with different size , then we adjusted the cleaning process and cleaned the wafer by according to the different texture to prepare cells .Finally we find that if the texture structure is very minimum , the damage on wafer can not be stripped completely and the antireflective SiNx is hard to deposition .The experiment results show that when prepared cells by RIE technology , the minimum texture structure and lowest reflectivity is not good , but the texture size of Nano pit should be controlled at 240 nm to 360 nm to match the cleaning and deposition of antireflective coatings more effectively , to be better made polycrystalline cells of high conversion efficiency .

Key words: The experiment was based on ( Reaction Ion Eatching ) RIE technology to prepare polycrystalline silicon wafer with nano scale , the surface texture structure can obviously reduce the reflectivity and improve the short-circuit current of crystalline silicon cells .The experiment specifically refers to the etching of polysilicon wafers in the same mixed acid solution to remove surface damage , and used RIE technology to make texture with different size , then we adjusted the cleaning process and cleaned the wafer by according to the different texture to prepare cells .Finally we find that if the texture structure is very minimum , the damage on wafer can not be stripped completely and the antireflective SiNx is hard to deposition .The experiment results show that when prepared cells by RIE technology , the minimum texture structure and lowest reflectivity is not good , but the texture size of Nano pit should be controlled at 240 nm to 360 nm to match the cleaning and deposition of antireflective coatings more effectively , to be better made polycrystalline cells of high conversion efficiency .