关键词: 氟化镁单晶;提拉法;透过率;应力双折射

Abstract: The compatible temperature field for MgF2 single crystal grown by Czochralski method was designed.The high-quality MgF2 single crystal with the diameter of 100 mm was successfully grown by this method.The single crystal shows no macroscopic defect or crack,and no bubble was found in the crystal.After artificial annealing,the transmittance of the crystal is as high as 95;,and the stress birefringence is less than 0.5 nm/cm.These results show that high-quality MgF2 single crystal can be grown by means of Czochralski method.

Key words: The compatible temperature field for MgF2 single crystal grown by Czochralski method was designed.The high-quality MgF2 single crystal with the diameter of 100 mm was successfully grown by this method.The single crystal shows no macroscopic defect or crack,and no bubble was found in the crystal.After artificial annealing,the transmittance of the crystal is as high as 95;,and the stress birefringence is less than 0.5 nm/cm.These results show that high-quality MgF2 single crystal can be grown by means of Czochralski method.