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人工晶体学报 ›› 2017, Vol. 46 ›› Issue (5): 753-758.

• •    下一篇

CuSCN空穴传输层工艺对钙钛矿电池性能的影响

赵善真;丁毅;郭升;石标;姚鑫;侯福华;郑翠翠;张德坤;魏长春;王广才;赵颖;张晓丹   

  1. 南开大学光电子薄膜器件与技术研究所,天津市光电子薄膜器件与技术重点实验室,天津 300071
  • 出版日期:2017-05-15 发布日期:2021-01-20
  • 基金资助:
    国家自然科学基金(61474065,61674084,61504069);天津市重点基金(15JCZDJC31300);江苏省重点项目(BE2014147-3);教育部111引智项目(B16027)

Fabrication of CuSCN Hole Transporting Layer and Its Influences on Perovskite Solar Cells

ZHAO Shan-zhen;DING Yi;GUO Sheng;SHI Biao;YAO Xin;HOU Fu-hua;ZHENG Cui-cui;ZHANG De-kun;WEI Chang-chun;WANG Guang-cai;ZHAO Ying;ZHANG Xiao-dan   

  • Online:2017-05-15 Published:2021-01-20

摘要: 采用溶液法制备了硫氰酸亚铜(CuSCN)薄膜,并将其作为空穴传输层制备了平面n-i-p型钙钛矿太阳电池.系统考察了CuSCN薄膜退火温度、旋涂转速对钙钛矿太阳电池性能的影响.研究结果表明,CuSCN薄膜在70 ℃下退火10 min可以获得较好的电池性能;在此基础上通过调整旋涂转速至2000 r/min,控制CuSCN薄膜厚度约为240 nm,电池性能获得了进一步的提升,电池效率可达11.77;.该研究结果表明,CuSCN材料是一种有潜力的、低成本高性能无机空穴传输材料.

关键词: CuSCN薄膜;钙钛矿太阳电池;溶液法;空穴传输层

Abstract: Planar n-i-p type perovskite solar cells were fabricated by using solution processed CuSCN as the hole transporting layer.The influences of CuSCN fabrication conditions such as annealing temperature, spin coating speed on solar cell performances were carefully investigated.The results show that, solar cells exhibits better performance by using CuSCN films annealed at 70 ℃ for 10 min.Furthermore, by controlling the spin coating speed at 2000 r/min, and fixing the CuSCN film thickness around 240 nm, solar cell performance has been improved substantially to 11.77;.Current work indicates that CuSCN has potential to be a cheap and high performance inorganic hole transporting material.

Key words: Planar n-i-p type perovskite solar cells were fabricated by using solution processed CuSCN as the hole transporting layer.The influences of CuSCN fabrication conditions such as annealing temperature, spin coating speed on solar cell performances were carefully investigated.The results show that, solar cells exhibits better performance by using CuSCN films annealed at 70 ℃ for 10 min.Furthermore, by controlling the spin coating speed at 2000 r/min, and fixing the CuSCN film thickness around 240 nm, solar cell performance has been improved substantially to 11.77;.Current work indicates that CuSCN has potential to be a cheap and high performance inorganic hole transporting material.

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