关键词: Cu(In,Ga)Se2薄膜太阳电池;温度系数;输出特性

Abstract: The temperature characteristic is an important feature of the solar cell , in this paper we report on the output characteristics of Cu ( In, Ga) Se2 ( CIGS) thin film solar cell changing with temperature (120-260 K).The study reveals that with the increasing temperature , the open circuit voltage of Voc lowers obviously with the temperature coefficient of -1.08 mV/K, while the short circuit current Isc rises slightly with the temperature coefficient of 0.01401 mA/K.This is mainly because with temperature rising, the band gap decreases and dark current increases , resulting in drop of Voc , more photogenerated carriers are stimulated and series resistance drops , resulting in the increase of Isc .With combined effects of these two aspects , the conversion efficiency decreases .

Key words: The temperature characteristic is an important feature of the solar cell , in this paper we report on the output characteristics of Cu ( In, Ga) Se2 ( CIGS) thin film solar cell changing with temperature (120-260 K).The study reveals that with the increasing temperature , the open circuit voltage of Voc lowers obviously with the temperature coefficient of -1.08 mV/K, while the short circuit current Isc rises slightly with the temperature coefficient of 0.01401 mA/K.This is mainly because with temperature rising, the band gap decreases and dark current increases , resulting in drop of Voc , more photogenerated carriers are stimulated and series resistance drops , resulting in the increase of Isc .With combined effects of these two aspects , the conversion efficiency decreases .