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人工晶体学报 ›› 2017, Vol. 46 ›› Issue (9): 1778-1785.

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Zn掺杂纤锌矿CdSe电子结构和光学性质的第一性原理研究

王霏宇;曾体贤;安辛友;杨辉;张敏;陈太红;宋婷婷   

  1. 西华师范大学物理与空间科学学院,南充,637009;西华师范大学物理与空间科学学院,南充637009;南京理工大学电子工程与光电技术学院,南京210094
  • 出版日期:2017-09-15 发布日期:2021-01-20
  • 基金资助:
    教育部春晖计划(Z2016122);四川省科技厅应用基础项目(2014JY0133)

First-principles Study on Electronic Structure and Optical Properties of Zn-doped Wurtzite CdSe

WANG Fei-yu;ZENG Ti-xian;AN Xin-You;YANG Hui;ZHANG Min;CHEN Tai-hong;SONG Ting-ting   

  • Online:2017-09-15 Published:2021-01-20

摘要: 采用密度泛函理论中的广义梯度近似平面波超软赝势方法,计算研究了不同浓度Zn原子掺杂纤锌矿结构CdSe的电子与光学性质.结果显示:随着Zn掺杂浓度的升高,纤锌矿Cd1-xZnxSe的体积在减小,形成能降低,掺杂越容易,稳定性变高;Zn掺杂引起导带底向高能方向移动,禁带宽度逐渐增加;掺杂后形成的Zn-Se键具有更大的密立根重叠布居数,表现出更强的共价性;体系的直接带隙宽度增加,导致光电子跃迁峰向高能方向发生蓝移;在紫外光区9.75eV左右,掺杂体系的吸收强度达到最大,能量损失最小.

关键词: 纤锌矿CdSe;第一性原理;Zn掺杂;光学性质

Abstract: Band structures , density of states and optical properties of different concentration of Zn atom dopping wurtzite Cd 1 -x Zn x Se are calculated and studied with plane-wave ultrasoft pseudopotential method based on first-principles density functional theory .After full relaxation , the calculations show that the volume of Cd1-xZnxSe increases, the formation energy of Cd1-xZnxSe reduces and the stability of Cd1 -x Znx Se become stronger with the increasing Zn impurity concentration .The Zn doping leads to the conduction band shift from low-energy area to high-energy area , and also band gaps of doped systems become wider .Zn-Se bond shows strong interaction , the Mulliken overpopulation is bigger , more covalent bonding character .The changing of gap induced blue shift of the optical transition peak .In the ultraviolet area around 9.75 eV, the absorption of doping system strength achieve its greatest and least energy loss .

Key words: Band structures , density of states and optical properties of different concentration of Zn atom dopping wurtzite Cd 1 -x Zn x Se are calculated and studied with plane-wave ultrasoft pseudopotential method based on first-principles density functional theory .After full relaxation , the calculations show that the volume of Cd1-xZnxSe increases, the formation energy of Cd1-xZnxSe reduces and the stability of Cd1 -x Znx Se become stronger with the increasing Zn impurity concentration .The Zn doping leads to the conduction band shift from low-energy area to high-energy area , and also band gaps of doped systems become wider .Zn-Se bond shows strong interaction , the Mulliken overpopulation is bigger , more covalent bonding character .The changing of gap induced blue shift of the optical transition peak .In the ultraviolet area around 9.75 eV, the absorption of doping system strength achieve its greatest and least energy loss .

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