关键词: SnS2薄膜;旋涂热解;化学计量比;拉曼光谱;光学吸收

Abstract: To prepare high stoichiometric-ratio SnS2 thin films rapidly, a facial spin coating-pyrolysis method was introduced and a serials SnS 2 thin films were prepared at 200 ℃, 260 ℃and 320 ℃in air using SnCl4 · 5H2 O and thiourea.To the best of our knowledge , the spin coating-pyrolysis method was the first time using to prepare SnS 2 thin films.Energy spectrum analysis ( EDS ) , X-ray diffraction ( XRD) , Raman scattering analysis , scanning electron microscopy ( SEM) and ultraviolet-visible spectro photometer ( UV-Vis ) were used to investigate the elementary compositions , crystalline phases , morphology and optical absorption of SnS 2 thin films. The SnS2 thin film with the high Sn/S stoichiometric-ratio of 1/1.98 and a direct corresponding ban gap of 2.50 eV was prepared at 260℃just for 2 min, which was very suitable for the window layer in thin film solar cells .

Key words: To prepare high stoichiometric-ratio SnS2 thin films rapidly, a facial spin coating-pyrolysis method was introduced and a serials SnS 2 thin films were prepared at 200 ℃, 260 ℃and 320 ℃in air using SnCl4 · 5H2 O and thiourea.To the best of our knowledge , the spin coating-pyrolysis method was the first time using to prepare SnS 2 thin films.Energy spectrum analysis ( EDS ) , X-ray diffraction ( XRD) , Raman scattering analysis , scanning electron microscopy ( SEM) and ultraviolet-visible spectro photometer ( UV-Vis ) were used to investigate the elementary compositions , crystalline phases , morphology and optical absorption of SnS 2 thin films. The SnS2 thin film with the high Sn/S stoichiometric-ratio of 1/1.98 and a direct corresponding ban gap of 2.50 eV was prepared at 260℃just for 2 min, which was very suitable for the window layer in thin film solar cells .