基于锑化物二类超晶格的多色红外探测器研究进展

人工晶体学报 ›› 2020, Vol. 49 ›› Issue (12): 2211-2220.

基于锑化物二类超晶格的多色红外探测器研究进展

蒋洞微^1,2,3, 徐应强^1,2,3, 王国伟^1,2,3, 牛智川^1,2,3

1.中国科学院半导体研究所,超晶格国家重点实验室,北京 100083;
2.中国科学院半导体研究所,锑化物窄带隙半导体研究中心,北京 100083;
3.中国科学院大学材料科学与光电技术学院,北京 101408

出版日期:2020-12-15 发布日期:2021-01-25
通信作者: 徐应强,博士,研究员。E-mail: yingqxu@semi.ac.cn
作者简介:蒋洞微(1985—),男,湖南省人,助理研究员。E-mail:jdw@semi.ac.cn。蒋洞微(1985—),男,现任中国科学院半导体研究所助理研究员。长期从事锑化物材料理论计算、材料生长、器件设计与工艺制备研究。先后承担博士后基金、航空基金、国家自然科学基金青年基金、国家重点研发计划(课题负责人)等多项科研项目,并参与多项国家重点科研项目研究任务。在锑化物材料能带理论设计、大尺寸材料分子束外延技术、多波段焦平面器件工艺方面均实现了重要突破。率先在国内完成多型锑化物超晶格红外焦平面探测器产品,探测波段全面覆盖2~20 μm波段,包括:320×256,640×512规模短波(1~3 μm)、中波(3~5 μm)、长波(8~12 μm)、甚长波(16 μm)焦平面探测器件,以及中/短与中/长双色红外焦平面器件。初步验证了锑化物超晶格红外探测器材料及器件的全国产化,相关研究成果得到中国电子学会技术鉴定。
徐应强(1977—),男,现任中国科学院半导体研究所研究员,博士生导师,《人工晶体学报》青年编委。从事锑化物半导体红外光电材料分子束外延生长及芯片研究,研制出最大640×512规模近、中、远、甚远红外单波段红外焦平面芯片,焦平面芯片77 K探测率均大于1×10¹⁰ cm·Hz^1/2·W^-1,在国际上率先实现全红外波段覆盖的锑化物红外焦平面芯片; 实现320×256规模近/中和中/远红外双波段红外焦平面芯片,成功实现2 μm波段锑化物半导体激光器室温连续输出功率达到1.5 W(单管)和16 W(线列),2 μm窄线宽激光器室温连续输出功率为40 mW时边摸抑制比达到43 dB。主持国家自然基金重大计划、重点研发计划纳米专项等项目课题多项。
基金资助:
国家重点研发计划(2019YFA0705203,2018YFA0209104);国家自然科学基金(62004189);航空科学基金(20182436004, 201924012001)

Research Progress in Antimonide-Based Type-II Superlattice Multi-Color Infrared Detectors

JIANG Dongwei^1,2,3, XU Yingqiang^1,2,3, WANG Guowei^1,2,3, NIU Zhichuan^1,2,3

1. State Key Laboratory for Supperlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. Centre for Antimonide Narrow-Bandgap Semiconductors(CANS), Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China

Online:2020-12-15 Published:2021-01-25

摘要/Abstract

摘要： 近年来InAs/GaSb二类超晶格红外探测器在材料晶体结构生长、器件结构设计与成像应用方面取得了飞速发展。尤其在多色红外探测方面,二类超晶格材料以其具备的带隙可调、暗电流小、量子效率高、材料均匀性高,以及成本低等优越性能,使其逐步成为第三代红外焦平面探测器的优选材料。本文阐述了锑化物窄带隙半导体研究中心的锑化物多色红外探测器研究进展。本团队成功实现了低噪声、高量子效率以及低光学串扰的短/中、短/长、中/长、长/长、中/长/甚长波等多种高性能多色红外探测器研制。

关键词: InAs/GaSb, 二类超晶格, 多色红外探测器, 量子效率, 光学串扰

Abstract: In recent years, Type-Ⅱ InAs/GaSb superlattice infrared detectors have experienced significant developments in material growth quality, device structural designs, and imaging applications. Especially for multi-color infrared detection, type-Ⅱ superlattice has several fundamental properties such as tunable band gap, low dark current, high quantum efficiency, high uniformity, and low cost, that makes it the preferred material for the third-generation infrared detection technology. In this paper, recent advances in antimonide multi-color detectors at the Center for Antimonide Narrow-Bandgap Semiconductors have been reported. Development of a variety of high-performance multi-color infrared detectors with low noise, high quantum efficiency and low optical crosstalk, such as short/mid, short/long, mid/long, long/long, and mid/long/very long multi-color infrared detectors were successfully realized.

Key words: InAs/GaSb, Type-Ⅱ superlattice, multi-color infrared detector, quantum efficiency, optical crosstalk

中图分类号:

TN215

蒋洞微, 徐应强, 王国伟, 牛智川. 基于锑化物二类超晶格的多色红外探测器研究进展[J]. 人工晶体学报, 2020, 49(12): 2211-2220.

JIANG Dongwei, XU Yingqiang, WANG Guowei, NIU Zhichuan. Research Progress in Antimonide-Based Type-II Superlattice Multi-Color Infrared Detectors[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(12): 2211-2220.

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