自支撑氮化硅膜结构制备工艺优化

人工晶体学报 ›› 2020, Vol. 49 ›› Issue (12): 2358-2364.

自支撑氮化硅膜结构制备工艺优化

王付雄¹, 谢婉谊^2,3

1.重庆中科精微科技有限公司,重庆 401329;
2.中国科学院重庆绿色智能技术研究院,重庆 400715;
3.中国科学院大学重庆学院,重庆 400715

出版日期:2020-12-15 发布日期:2021-01-25
通信作者: 谢婉谊,助理研究员。E-mail:xiewanyi@cigit.ac.cn
作者简介:王付雄(1988—),男,湖北省人,硕士研究生。E-mail:630898488@qq.com
基金资助:
重庆市基础研究与前沿探索项目(cstc2018jcyjAX0308)

Process Optimization for Fabrication of Self-Supporting Silicon Nitride Film Structure

WANG Fuxiong¹, XIE Wanyi^2,3

1. Chongqing Zhongke Genvi Technology Co. Ltd., Chongqing 401329, China;
2. Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400715, China;
3. Chongqing School, University of Chinese Academy of Sciences, Chongqing 400715, China

Online:2020-12-15 Published:2021-01-25

摘要/Abstract

摘要： 自支撑氮化硅膜结构一般是基于微纳加工技术来制备的。为了提高膜结构的品质,本文分别对自支撑氮化硅膜结构制备中的干法刻蚀参数和各向异性湿法腐蚀参数进行了研究和优化,其中干法刻蚀参数主要包括反应气体配比和刻蚀时间,各向异性湿法腐蚀参数主要包括腐蚀剂浓度和腐蚀温度。在不同的参数组合下进行实验,使用光学显微镜观察并比较不同样品的表面形貌,得到了较理想的参数组合。在干法刻蚀的反应气体中加入少量O₂可改善刻蚀效果,反应气体配比V(SF₆)∶V(CHF₃)∶V(O₂)=6∶37∶3,刻蚀时间2 min。湿法腐蚀中腐蚀剂在质量分数25%处达到最大的硅腐蚀速率,同时氮化硅表面形貌也较理想。

关键词: 氮化硅, 干法刻蚀, 各向异性湿法腐蚀, 单晶硅, 自支撑膜结构

Abstract: Generally, the self-supporting silicon nitride film structure is based on micro-nano fabrication technology. Fabrication of self-supporting silicon nitride film structure was studied in this paper, in which parameters of dry etching and anisotropic wet etching were optimized to enhance the quality of self-supporting film structure. Dry etching process included reaction gas ratio and etching time, anisotropic wet etching process involved etchant concentration and etching temperature. First, the experiments were conducted with different parameters. Then the surface morphology of the films fabricated in these experiments were observed by optical microscope, during which the ideal process condition was obtained by comparing the results. It was found that the addition of oxygen to the reaction gas can improve the effect of dry etching, and the best ratio of etching gas is V(SF₆)∶V(CHF₃)∶V(O₂)=6∶37∶3, with 2 min etching time. In wet drying, etching with a mass fraction 25% etchant can achieve the maximum etching rate and ideal surface morphology of silicon nitride film.

Key words: silicon nitride, dry etching, anisotropic wet etching, single-crystal silicon, self-supporting film structure

中图分类号:

TB383

王付雄, 谢婉谊. 自支撑氮化硅膜结构制备工艺优化[J]. 人工晶体学报, 2020, 49(12): 2358-2364.

WANG Fuxiong, XIE Wanyi. Process Optimization for Fabrication of Self-Supporting Silicon Nitride Film Structure[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(12): 2358-2364.

参考文献

[1] 赵毅红,陈荣发,刘伯实.Si₃N₄薄膜的成分与结构研究[J].真空,2004(4):71-73.
[2] Kovacs G T A, Maluf N I, Petersen K E. Bulk micromachining of silicon[J]. Proceedings of the IEEE, 1998, 86(8): 1536-1551.
[3] Dekker C. Solid-state nanopores[J]. Nature Nanotechnology, 2007, 2(4): 209-215.
[4] Li J, Gershow M, Stein D, et al. DNA molecules and configurations in a solid-state nanopore microscope[J]. Nature Materials, 2003, 2(9): 611-615.
[5] Yanagi I, Ishida T, Fujisaki K, et al. Fabrication of 3-nm-thick Si₃N₄ membranes for solid-state nanopores using the poly-Si sacrificial layer process[J]. Scientific Reports, 2015(5): 14656.
[6] Jutzi F, Wicaksono D H B, Pandraud G, et al. Far-infrared sensor with LPCVD-deposited low-stress Si-rich nitride absorber membrane Part 1.Optical absorptivity[J]. Sensors & Actuators A:Physical, 2009, 152(2): 119-125.
[7] Tellier C R. Anisotropic etching of silicon crystals in KOH solution[J].Journal of Materials Science, 1998, 33(1): 117-131.
[8] 马建,王欣,李堃,等.基于氮化硅薄膜纳米孔制备及DNA分子检测[J].东南大学学报(自然科学版),2017,47(2):265-270.
[9] 武灵芝,吴宏文,刘丽萍,等.基于聚焦离子束的氮化硅纳米孔的制备和表征[J].生物物理学报,2013,29(3):203-212.
[10] Biswas K, Kal S. Etch characteristics of KOH, TMAH and dual doped TMAH for bulk micromachining of silicon[J]. Microelectronics Journal, 2006, 37(6): 519-525.
[11] 张锦,冯伯儒,杜春雷,等.反应离子刻蚀工艺因素研究[J].光电工程,1997(24): 46-51.
[12] 苟君,吴志明,太惠玲,等.氮化硅的反应离子刻蚀研究[J].电子器件,2009(5): 864-866+870.
[13] Knizikevicius R, Kopustinskas V. Influence of temperature on the etching rate of SiO₂ in CF₄+O₂ plasma[J]. Microelectronic Engineering, 2006, 83(2): 193-196.
[14] 吴文娟,张松,韩培育,等.快速制备单晶Si片绒面的研究[J].人工晶体学报,2011,40(2): 352-358.
[15] Glembocki O J, Palik E D, De Guel G R. Hydration model for the molarity dependence of the etch rate of Si in aqueous alkali hydroxides[J]. Journal of the Electrochemical Society, 1991, 138(4): 1055-1063.
[16] Shikida M, Sato K, Tokoro K, et al. Comparison of anisotropic etching properties between KOH and TMAH solutions[C]. Twelfth IEEE International Conference on Micro Electro Mechanical Systems.IEEE, 2002.
[17] Shin Hyeon-Jin, Park In-Sung, Jang Yong-Ju, et al. Fabrication of free-standing nanoscale SiNx membranes with enhanced burst pressure via improved etching process[J]. Sensors & Actuators A:Physical, 2019(9): 297.