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人工晶体学报 ›› 2021, Vol. 50 ›› Issue (1): 60-65.

• 研究论文 • 上一篇    下一篇

超薄异质结太阳能电池理论模拟计算及分析

车晋1, 卢海江2   

  1. 1.山西农业大学信息学院,晋中 030800;
    2.宣城开盛新能源科技有限公司,宣城 242000
  • 收稿日期:2020-11-03 出版日期:2021-01-15 发布日期:2021-03-01
  • 通讯作者: 卢海江,工程师。E-mail:luhaijiangg601663@163.com
  • 作者简介:车 晋(1987—),女,山西省人,讲师。E-mail:362738296@qq.com

Theoretical Simulation and Analysis of Ultrathin Heterojunction Solar Cells

CHE Jin1, LU Haijiang2   

  1. 1. School of Information, Shanxi Agricultural University, Jinzhong 030800, China;
    2. Xuancheng Kaisheng New Energy Technology Co., Ltd., Xuancheng 242000, China
  • Received:2020-11-03 Online:2021-01-15 Published:2021-03-01

摘要: 采用AFORS-HET软件对超薄异质结太阳能电池的窗口层、本征层的掺杂浓度、厚度、带隙等参数进行了数值模拟和优化,结合实际具体分析了每个参数对超薄异质结电池性能的影响规律,且得出了最佳的优化参数。模拟结果表明:对于衬底厚度仅为80 μm的超薄异质结太阳能电池,随着窗口层厚度的增加,电池性能整体呈现下降的趋势,通过结合实际,得出窗口层的最佳厚度范围是5~9 nm;随着窗口层掺杂浓度的增加,电池性能整体呈现先增加后趋于恒定的趋势,窗口层理论上的最佳掺杂浓度范围为7×1019~8×1019;窗口层的带隙宽度对电池的开路电压和效率影响较大,对填充因子和短路电流有较小的影响,窗口层的最优带隙范围为1.85~2.0 eV。随着本征层厚度的增加,电池的填充因子FF和效率Eff呈现先增加后减小的趋势,短路电流逐渐减小,而开路电压基本不变,本征层的最佳厚度是5~10 nm;当本征层的光学带隙小于1.8 eV时,对电池性能影响较小,当大于1.8 eV,电池性能急剧下降,因此本征层的最佳带隙范围是1.6~1.8 eV。

关键词: 纳米晶硅, 超薄异质结太阳能电池, 模拟计算, 窗口层, 本征层

Abstract: The parameters of the window layer and intrinsic layer of the ultrathin heterojunction solar cells were simulate and optimize with AFORS-HET software, such as doping concentration, thickness and band gap, et al. The influence law of each parameter on the performance of the ultrathin heterojunction solar cell was analyzed in combination with the actual situation, and the optimal optimization parameters were obtained. The simulation results show that: for the ultrathin heterojunction solar cell with substrate thickness of only 80 μm, with the increase of the thickness of the window layer, the overall performance of the cell shows a trend of decline. According to the practical situation, the optimal thickness range of the window layer is 5 nm to 9 nm. With the increase of the doping concentration in the window layer, the cell performance as a whole increases first and then tends to be constant. The optimal doping concentration range of the window layer theoretically is 7×1019 to 8×1019.The band gap width of the window layer has a great influence on the open-circuit voltage and efficiency of the battery, but has a small influence on the filling factor and short-circuit current. The optimal band gap range of the window layer is 1.85 eV to 2.0 eV.With the increase of the thickness of the intrinsic layer, the FF and efficiency of the cell first increases and then decreases. The short-circuit current gradually decreases while the open-circuit voltage remains basically unchanged. The optimal thickness of the intrinsic layer is 5 nm to 10 nm.When the optical band gap of the intrinsic layer is less than 1.8 eV, it has little influence on the battery performance; when the optical band gap of the intrinsic layer is more than 1.8 eV, the cell performance drops sharply. Therefore, the optimal band gap range of the intrinsic layer is 1.6 eV to 1.8 eV.

Key words: nanocrystalline silicon, ultrathin heterojunction solar cell, analog computation, window layer, intrinsic layer

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