N型TOPCon晶硅太阳能电池光注入退火增效的研究

摘要/Abstract

摘要： N型隧穿氧化层钝化接触(Tunnel Oxide Passivating Contacts,TOPCon)太阳能电池完成印刷烧结后,再经过光注入,效率有明显提升,主要表现在V_oc(开路电压)及FF(填充因子)的提升。其机理在于通过温度和光照强度调节费米能级变化,控制H总量及价态来提高钝化性能。钝化膜层的质量、硅基体掺杂浓度、光注入退火时的工艺温度等对光注入退火工艺提升效率有很大影响。实验证明转换效率越低的电池片经过光注入后效率提升幅度越大;转换效率越高的电池片缺陷会更小,经过光注入退火工艺后几乎无增益。另外同心圆在经过光注入退火工艺后会明显消除。本文主要研究温度、光强、基体电阻率、正表面金属接触面积大小、poly-Si(多晶硅)厚度对光注入退火工艺增效的影响。

关键词: 光注入, 退火, 钝化膜, 对称结构, 多晶硅, 温度, 同心圆

Abstract: After printing and sintering of the N type TOPCon (Tunnel Oxide Passivating Contacts) solar cells, the efficiency was improved significantly by light injection, which mainly manifested in the improvement of V_oc and FF. The mechanism is to improve the passivation performance through adjusting the Fermi energy level by temperature and light intensity and controlling the total amount and valence state of H. The quality of the passivation film, the doping concentration of silicon substrate and the temperature during the light injection annealing process have great influence on the efficiency of the light injection annealing process. The experiments show that the lower the conversion efficiency of the battery is, the higher the efficiency is after light injection. The higher the conversion efficiency is, the smaller the defect will be, and the efficiency has almost no gain after the light injection annealing process. In addition, concentric circles can be eliminated obviously after light injection annealing process. This paper mainly studies the effects of temperature, light intensity, substrate resistivity, front surface metal contact area and poly-Si thickness on the efficiency of light injection annealing process.

Key words: light injection, annealing, passivation film, symmetrical structure, poly-Si, temperature, concentric circle

中图分类号:

TM914.4

魏凯峰, 刘大伟, 倪玉凤, 张婷, 刘军保, 张天杰, 杨露. N型TOPCon晶硅太阳能电池光注入退火增效的研究[J]. 人工晶体学报, 2021, 50(1): 66-72.

WEI Kaifeng, LIU Dawei, NI Yufeng, ZHANG Ting, LIU Junbao, ZHANG Tianjie, YANG Lu. Light Injection Study of N-TOPCon Silicon Solar Cells on Annealing Synergies[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(1): 66-72.

参考文献

[1] 陈俊帆,赵生盛,高天,等.高效单晶硅太阳电池的最新进展及发展趋势[J].材料导报,2019,33(1):110-116.
CHEN J F, ZHAO S S, GAO T, et al. High-efficiency monocrystalline silicon solar cells: development trends and prospects[J]. Materials Reports, 2019, 33(1): 110-116(in Chinese).
[2] 叶枫.N型单晶接触钝化电池背表面形貌的研究[C].第四届N型晶硅电池与钝化接触技术论坛,2019.
YE F . Study on the surface morphology of N-type single crystal contact passivation battery[C]. The 4th Forum on contact technology of N-type crystalline silicon battery and passivation, 2019.
[3] 胡志华,刘祖明,陈庭金,等.多晶硅太阳电池的有效等离子体氢钝化[J].云南师范大学学报(自然科学版),2002,22(2):9-12.
HU Z H, LIU Z M, CHEN T J, et al. Effective plasma hydrogen passivation of mc-Si solar cells after finishing contacts[J]. Journal of Yunnan Normal University (Natural Sciences Edition), 2002, 22(2): 9-12(in Chinese).
[4] 施天生,钟钦.晶体硅中氢钝化硼的机理[J].半导体学报,1989,10(10):763-768.
SHI T S, ZHONG Q. Mechanism of the hydrogen passivation of boron in crystalline silicon[J]. Chinese Journal of Semiconductors, 1989, 10(10): 763-768(in Chinese).
[5] 崔艳峰. HJT电池光致衰减(增益)的研究[C].光伏专委会,2020.
CUI Y F. Study on photoattenuation (gain) of HJT cell[C]. ECOTV, 2020.
[6] 用于n+薄多晶硅层钝化接触的新型宽温度窗口银浆[C].第六届太阳电池浆料与5G滤波器浆料论坛,2020.
New wide temperature window silver paste for passivating contact of n⁺ thin polysilicon layer[C]. 6th Solar Cell Paste and 5G Filter Paste Forum, 2020.
[7] 席珍强.晶体硅中缺陷和沉淀的红外扫描仪研究[J].半导体技术,2005,30(7):18-20.
XI Z Q. Scanning infrared microscopy investigation of defects and precipitates in crystalline silicon[J]. Semiconductor Technology, 2005, 30(7): 18-20(in Chinese).
[8] 张高洁.热处理对晶体硅电池PECVD a-SiNx∶H薄膜氢钝化效果的影响[C].第十届中国太阳能光伏会议论文集,169-174.
ZHANG G J. Effect of heat treatment on the hydrogen passivation of crystalline silicon cell PECVD A-Sinx∶H thin film[C]. Proceedings of the 10th Chinese Solar Pv Conference, 169-174.

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