基于液滴外延法的Al(In)纳米结构在GaAs(001)的形成机制

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (12): 2225-2231.

基于液滴外延法的Al(In)纳米结构在GaAs(001)的形成机制

王一^1,2, 李志宏^1,2, 丁召^1,2,3, 杨晨^1,3, 罗子江⁴, 王继红¹, 郭祥^1,2,3

1.贵州大学大数据与信息工程学院, 贵阳 550025;
2.教育部半导体功率器件可靠性工程中心,贵阳 550025;
3.贵州省微纳电子与软件技术重点实验室,贵阳 550025;
4.贵州财经大学信息学院,贵阳 550025

收稿日期:2021-08-20 出版日期:2021-12-15 发布日期:2022-01-06
通讯作者: 郭祥,博士,副教授。E-mail:xguo@gzu.edu.cn
作者简介:王一(1989—),男,贵州省人,博士,高级实验师。E-mail:ywang16@gzu.edu.cn
基金资助:
国家自然科学基金(62065003);贵州省自然科学基金(QKH-[2020]1Y271);教育部半导体功率器件可靠性研究中心开放项目(ERCMEKFJJ2019-(08))

Study on the Formation Mechanism of Al(In) Nanostructures on GaAs(001) by Droplet Epitaxy

WANG Yi^1,2, LI Zhihong^1,2, DING Zhao^1,2,3, YANG Chen^1,3, LUO Zijiang⁴, WANG Jihong¹, GUO Xiang^1,2,3

1. College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China;
2. Power Semiconductor Device Reliability Engineering Center of the Ministry of Education, Guiyang 550025, China;
3. Key Laboratory of Micro-Nano-Electronics and Software Technology of Guizhou Province, Guiyang 550025, China;
4. College of Information, Guizhou University of Finance and Economics, Guiyang 550025, China

Received:2021-08-20 Online:2021-12-15 Published:2022-01-06

摘要/Abstract

摘要： 采用液滴外延法在GaAs(001)衬底上同时沉积In、Al液滴形成纳米结构,利用原子力显微镜(AFM)对实验样品进行形貌表征,并通过X射线光电子能谱(XPS)与扫描电子显微镜分析In、Al组分比样品表面元素分布。实验结果显示,混合沉积后的表面InAlAs纳米结构密度随着In组分的降低而降低,而单个纳米结构的尺寸变大。SEM与XPS测试结果证明表面的In并没有因为衬底温度过高而全部偏析。根据实验结果推测,In&Al液滴同时沉积到表面形成InAl混合液滴。当液滴完全晶化后纳米结构中心出现孔洞,而产生这一现象的主要原因是液滴向下刻蚀。

关键词: In&Al混合液滴, GaAs, 液滴外延, 表面扩散, 分子束外延, 纳米结构

Abstract: The indium and aluminum droplets were simultaneously grown on GaAs (001) substrate by droplet epitaxy method. The morphology of the samples with different indium and aluminum components was characterized by atomic force microscopy (AFM), and the distribution of elements on the surface was observed by XPS and scanning electron microscope (SEM). Results show that the density of InAlAs nanostructures on the surface of mixed deposition decreases with the decreases of indium composition, while the size of individual nanostructures increases. The experimental results show that the density of surface InAlAs nanostructures after hybrid deposition decreases with indium component decreasing, while the size of individual nanostructures becomes larger. SEM and XPS test results prove that the indium on the surface is not all segregated due to the high substrate temperature. It is speculated from the experimental results that when indium & aluminum droplets are deposited on the surface, a mixed indium & aluminum droplet is formed. The formation of dips in the center of the nanostructures formed after complete crystallization of the droplets is mainly due to the downward etching of droplets.

Key words: indium & aluminum droplet, GaAs, droplet epitaxy, surface diffusion, MBE, nanostructure

中图分类号:

O781
TB383

王一, 李志宏, 丁召, 杨晨, 罗子江, 王继红, 郭祥. 基于液滴外延法的Al(In)纳米结构在GaAs(001)的形成机制[J]. 人工晶体学报, 2021, 50(12): 2225-2231.

WANG Yi, LI Zhihong, DING Zhao, YANG Chen, LUO Zijiang, WANG Jihong, GUO Xiang. Study on the Formation Mechanism of Al(In) Nanostructures on GaAs(001) by Droplet Epitaxy[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(12): 2225-2231.

参考文献

[1] JIANG J K, LI Y, CHANG F R, et al. MBE growth of mid-wavelength infrared photodetectors based on high quality InAs/AlAs/InAsSb superlattice[J]. Journal of Crystal Growth, 2021, 564: 126109.
[2] GOLOVYNSKYI S, DATSENKO O I, SERAVALLI L, et al. InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: photoelectric properties and deep levels[J]. Microelectronic Engineering, 2021, 238: 111514.
[3] ALNAMI N, KUMAR R, KUCHUK A, et al. InAs nanostructures for solar cell: improved efficiency by submonolayer quantum dot[J]. Solar Energy Materials and Solar Cells, 2021, 224: 111026.
[4] BARSEGHYAN M G, MANASELYAN A K, LAROZE D, et al. Impurity-modulated Aharonov-Bohm oscillations and intraband optical absorption in quantum dot-ring nanostructures[J]. Physica E: Low-Dimensional Systems and Nanostructures, 2016, 81: 31-36.
[5] ZHAO Z Y, MIN Y, HUANG Y Y. Photon-assisted transport through an Aharonov-Bohm ring with a side-coupled double quantum dots[J]. Physica E: Low-Dimensional Systems and Nanostructures, 2019, 114: 113589.
[6] LI H D, WANG Y, LIU S H, et al. Spin thermoelectric properties based on a Rashba triple-quantum-dot ring[J]. Journal of Applied Physics, 2018, 124(8): 085103.
[7] SU L L, LIANG B L, WANG Y, et al. Abnormal photoluminescence for GaAs/Al_0.2Ga_0.8As quantum dot-ring hybrid nanostructure grown by droplet epitaxy[J]. Journal of Luminescence, 2018, 195: 187-192.
[8] ZHAO X, ZHENG J, YUAN R Y, et al. Fano resonance and power output in a quantum-dot-embedded Aharonov-Bohm ring subjected to THz irradiation[J]. Current Applied Physics, 2019, 19(4): 447-451.
[9] YI G Y, WANG X Q, GONG W J, et al. Josephson effect in a triple-quantum-dot ring with one dot coupled to superconductors: numerical renormalization group calculations[J]. Physics Letters A, 2016, 380(14/15): 1385-1391.
[10] BARSEGHYAN M G, KIRAKOSYAN A A, LAROZE D. Laser driven intraband optical transitions in two-dimensional quantum dots and quantum rings[J]. Optics Communications, 2017, 383: 571-576.
[11] LEON R, PETROFF P M, LEONARD D, et al. Spatially resolved visible luminescence of self-assembled semiconductor quantum dots[J]. Science, 1995, 267(5206): 1966-1968.
[12] FAFARD S, LEON R, LEONARD D, et al. Visible photoluminescence from N-dot ensembles and the linewidth of ultrasmallAl_yIn_1-yAs/Al_xGa_1-xAs quantum dots[J]. Physical Review B, 1994, 50(11): 8086-8089.
[13] GAPONENKO M S, LUTICH A A, TOLSTIK N A, et al. Temperature-dependent photoluminescence of PbS quantum dots in glass: evidence of exciton state splitting and carrier trapping[J]. Physical Review B, 2010, 82(12): 125320.
[14] DE MELLO DONEGÁ C, BODE M, MEIJERINK A. Size- and temperature-dependence of exciton lifetimes in CdSe quantum dots[J]. Physical Review B, 2006, 74(8): 085320.
[15] SELLAMI N, MELLITI A, SAHLI A, et al. The effect of the excitation and of the temperature on the photoluminescence circular polarization of AlInAs/AlGaAs quantum dots[J]. Applied Surface Science, 2009, 256(5): 1409-1412.
[16] YOFFE A D. Semiconductor quantum dots and related systems: electronic, optical, luminescence and related properties of low dimensional systems[J]. Advances in Physics, 2001, 50(1): 1-208.
[17] KOGUCHI N, ISHIGE K. Growth of GaAs epitaxial microcrystals on an S-terminated GaAs substrate by successive irradiation of Ga and as molecular beams[J]. Japanese Journal of Applied Physics, 1993, 32(Part 1, No. 5A): 2052-2058.
[18] CHIKYOW T, KOGUCHI N. Microcrystal growth of GaAs on a Se-terminated GaAlAs surface for the quantum-well box structure by sequential supplies of Ga and As molecular beams[J]. Applied Physics Letters, 1992, 61(20): 2431-2433.
[19] KIM J S, KOGUCHI N. Near room temperature droplet epitaxy for fabrication of InAs quantum dots[J]. Applied Physics Letters, 2004, 85(24): 5893-5895.
[20] MANO T, WATANABE K, TSUKAMOTO S, et al. New self-organized growth method for InGaAs quantum dots on GaAs(001) using droplet epitaxy[J]. Japanese Journal of Applied Physics, 1999, 38(Part 2, No. 9A/B): L1009-L1011.
[21] MANO T, WATANABE K, TSUKAMOTO S, et al. Nanoscale InGaAs concave disks fabricated by heterogeneous droplet epitaxy[J]. Applied Physics Letters, 2000, 76(24): 3543-3545.
[22] KOGUCHI N, TAKAHASHI S, CHIKYOW T. New MBE growth method for InSb quantum well boxes[J]. Journal of Crystal Growth, 1991, 111(1/2/3/4): 688-692.
[23] WANG Y, GUO X, WEI J M, et al. Effect of initial crystallization temperature and surface diffusion on formation of GaAs multiple concentric nanoring structures by droplet epitaxy[J]. Chinese Physics B, 2020, 29(4): 046801.
[24] CHEN Z B, LEI W, CHEN B, et al. Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition[J]. Applied Physics Letters, 2014, 104(2): 022108.
[25] MANCA P. A relation between the binding energy and the band-gap energy in semiconductors of diamond or zinc-blende structure[J]. Journal of Physics and Chemistry of Solids, 1961, 20(3/4): 268-273.
[26] ZOCHER M, HEYN C, HANSEN W. Droplet etching with indium-intermixing and lattice mismatch[J]. Journal of Crystal Growth, 2019, 512: 219-222.
[27] HEYN C, SCHNÜLL S, HANSEN W. Scaling of the structural characteristics of nanoholes created by local droplet etching[J]. Journal of Applied Physics, 2014, 115(2): 024309.