宽周期掩膜法HVPE侧向外延自支撑GaN的研究

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (3): 416-420.

宽周期掩膜法HVPE侧向外延自支撑GaN的研究

陈王义博^1,2, 徐俞³, 曹冰^1,2, 徐科³

1.苏州大学光电科学与工程学院,苏州纳米科技协同创新中心,苏州 215006;
2.江苏省先进光学制造技术重点实验室和教育部现代光学技术重点实验室,苏州 215006;
3.中国科学院苏州纳米技术与纳米仿生研究所,苏州 215123

收稿日期:2021-01-17 出版日期:2021-03-15 发布日期:2021-04-15
通信作者: 曹冰,博士,教授。E-mail:bcao2006@163.com;徐俞,博士,副研究员。E-mail:yxu2007@sinano.ac.cn
作者简介:陈王义博(1996—),男,江苏省人,硕士研究生。E-mail:540112050@qq.com
基金资助:
国家自然科学基金重点项目(61734008); 国家重点研发计划(2017YFB0404100)

Epitaxial Laterally Overgrown Free-Standing GaN through HVPE by Wide-Period Mask Method

CHEN Wangyibo^1,2, XU Yu³, CAO Bing^1,2, XU Ke³

1. Collaborative Innovation Center of Suzhou Nano Science and Technology, School of Optoelectronic Science and Engineering,Soochow University, Suzhou 215006, China;
2. Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou 215006, China;
3. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2021-01-17 Online:2021-03-15 Published:2021-04-15

摘要/Abstract

摘要： GaN膜在传统生长过程中主要通过异质外延获得,这往往会产生晶格失配和热失配,给GaN带来严重的位错和应力。目前降低位错最广泛的方法是使用侧向外延技术。在这项工作中,首先在蓝宝石基GaN衬底上沉积了一层SiO₂,并用光刻的方法将其制备成高掩膜宽度(窗口宽度20 μm/掩膜宽度280 μm)的宽周期掩膜,再通过氢化物气相外延(HVPE)侧向外延了厚度为325 μm的GaN厚膜,通过胶带可以将其进行剥离形成自支撑衬底。同时通过二维的Wulff结构图研究了GaN生长过程中晶面的变化趋势。宽周期掩膜法对于生长可剥离的低位错密度自支撑GaN有着重大意义。

关键词: 自支撑GaN, 侧向外延, 氢化物气相外延, 宽周期掩膜法, 半导体

Abstract: Gallium nitride (GaN) films are mainly obtained through heteroepitaxial growth in the traditional growth process, which often causes lattice mismatch and thermal mismatch, and therefore also brings serious dislocations and stress to GaN. At present, the most widespread method to reduce dislocations is epitaxial laterally overgrown (ELOG) technology. In this work, a layer of silicon dioxide (SiO₂) was deposited on a sapphire-based GaN substrate and it was made into wide period mask with high mask width (window width 20 μm/mask width 280 μm) by photolithography. The 325 μm thick GaN film is epitaxially grown by hydride vapor phase epitaxy (HVPE). The sample can be released by tape. At the same time, the change trend of the crystal plane during the growth of GaN is studied through the two-dimensional Wulff construction. The wide-period mask method is of great significance for the growth of peelable, low-dislocation density free-standing GaN.

Key words: free-standing GaN, epitaxial laterally overgrown, HVPE, wide-period mask method, semiconductor

中图分类号:

O78
TN304

陈王义博, 徐俞, 曹冰, 徐科. 宽周期掩膜法HVPE侧向外延自支撑GaN的研究[J]. 人工晶体学报, 2021, 50(3): 416-420.

CHEN Wangyibo, XU Yu, CAO Bing, XU Ke. Epitaxial Laterally Overgrown Free-Standing GaN through HVPE by Wide-Period Mask Method[J]. Journal of Synthetic Crystals, 2021, 50(3): 416-420.

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