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人工晶体学报 ›› 2021, Vol. 50 ›› Issue (3): 447-453.

• 研究论文 • 上一篇    下一篇

Bi4Ge3O12:Er3+晶体中的高阶混合效应对EPR g因子的影响

郝丹辉1, 柴瑞鹏2, 梁良2   

  1. 1.西安建筑科技大学华清学院物理教研室,西安 710043;
    2.西安建筑科技大学理学院,西安 710055
  • 收稿日期:2020-12-16 出版日期:2021-03-15 发布日期:2021-04-15
  • 通讯作者: 柴瑞鹏,博士,讲师。E-mail:chairuipeng2005@163.com
  • 作者简介:郝丹辉(1984—),女,河南省人,硕士,讲师。E-mail:dhhao0527@sina.com
  • 基金资助:
    陕西省教育厅自然科学专项基金(18JK025); 陕西省自然科学基础研究基金面上项目(2020JM-476)

High-Order Mixing Effects on EPR g-factors for Er3+ Doped Bi4Ge3O12 Crystals

HAO Danhui1, CHAI Ruipeng2, LIANG Liang2   

  1. 1. Department of Physics, Xi'an University of Architecture and Technology Hua Qing College, Xi'an 710043, China;
    2. College of Science, Xi'an University of Architecture and Technology, Xi'an 710055, China
  • Received:2020-12-16 Online:2021-03-15 Published:2021-04-15

摘要: 通过对角化364×364完全能量矩阵的理论方法,对掺杂在Bi4Ge3O12晶体中的Er3+的Stark能级和EPR参数进行了研究,同时,定量分析了高阶晶体场混合效应和J-J混合效应对EPR g因子的影响。研究结果表明:对Er3+来说,最主要的J-J混合效应来源于多重态谱项2K15/2,其对EPR g因子的贡献约占2.5%,而最主要的高阶晶体场混合效应来源于第一激发多重态4I13/2和基态多重态4I15/2之间的晶体场混合,其对各向异性g因子中g的贡献大致是g//的两倍(即g约占 0.21%,g//约占0.092%),其他更高阶的晶体场混合和J-J混合效应可以忽略不计。因此,对于Er3+掺杂的络合物系统来说,只考虑基态多重态4I15/2对EPR g因子的贡献应该是一个很好的近似。

关键词: Er3+, Bi4Ge3O12, 晶体场效应, J-J混合效应, EPR g因子

Abstract: Stark levels and EPR parameters of Er3+ doped in Bi4Ge3O12 crystal were studied by diagonalizing 364×364 complete energy matrices. Simultaneously, the crystal-field and J-J mixing effects on the EPR g-factors from the higher lying manifolds were evaluated, quantitatively. The results indicate that the dominant J-J mixing contribution from manifold 2K15/2 accounts for about 2.5% for the Er3+. However, the most significant high-order mixing effect is from the crystal-field admixture between the first excited manifold 4I13/2 and ground manifold 4I15/2, where the contribution to g is almost twice as much as that to g// (0.21% for g, 0.092% for g//).The other crystal-field and J-J mixing effects from the higher lying manifolds can be neglected. Therefore, only considering the contribution of ground manifold 4I15/2 to EPR g-factor is a good approximation for the complex system doped with Er3+ ions.

Key words: Er3+, Bi4Ce3O12, crystal-field effect, J-J mixing effect, EPR g-factor

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