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人工晶体学报 ›› 2021, Vol. 50 ›› Issue (3): 578-586.

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低维第五主族纳米材料的研究进展:从结构性质到制备应用

刘奇超1, 张会2   

  1. 1.沈阳大学机械工程学院,沈阳 110044;
    2.沈阳大学师范学院,沈阳 110044
  • 收稿日期:2020-12-16 出版日期:2021-03-15 发布日期:2021-04-15
  • 通信作者: 张 会,博士,副教授。E-mail:huizhangsy@outlook.com
  • 作者简介:刘奇超(1995—),女,辽宁省人,硕士研究生。E-mail:893241301@qq.com
  • 基金资助:
    辽宁省自然科学基金(2020-MS-306,20180550955)

Research Progress of Low-Dimensional Group-VA Nanomaterials:from Structural Properties to Preparation Applications

LIU Qichao1, ZHANG Hui2   

  1. 1. College of Mechanical Engineering, Shenyang University, Shenyang 110044, China;
    2. Normal College, Shenyang University, Shenyang 110044, China
  • Received:2020-12-16 Online:2021-03-15 Published:2021-04-15

摘要: 石墨烯的零带隙和二硫化钼载流子迁移率低的性质阻碍了它们在电子器件中的应用。单层黑磷的成功制备和磷烯的直接带隙、较高的载流子迁移率和负的泊松比等性质弥补了石墨烯和二硫化钼的不足,引发了人们对低维第五主族纳米材料的研究兴趣,使低维第五主族纳米材料在材料科学和光电子等领域快速发展。本文总结了近几年第五主族低维纳米材料的一些研究成果,结合理论计算和实验合成两个方面进行研究,分析了材料的结构和性能之间的关系,最后对上述材料的制备方法及应用情况进行了总结。低维第五主族纳米材料呈现出多种晶体结构、较高的动力学稳定性、丰富的电子结构性质和较高的载流子迁移率等特性。上述性质使得低维第五主族纳米材料在低维光电子器件等方面具有广泛的应用前景。

关键词: 低维纳米材料, 磷烯, 砷烯, 锑烯, 铋烯, 二维半导体

Abstract: The zero band gap of graphene and low carrier mobility of molybdenum disulfide hinder their applications in electronic device. The successful preparation of single-layer black phosphorous and the direct band gap, higher carrier mobility and negative poisson's ratio of phosphene make up for the shortcomings of graphene and molybdenum disulfide, which has triggered great research interests on the low-dimensional group-VA nanomaterials. It enables the rapid development of low-dimensional group-VA nanomaterials in the fields of materials science and optoelectronics. Recent research results on the low-dimensional group-VA nanomaterials are summarized in this paper. Combining theoretical calculations and experimental synthesis, relationship between the structure and performance of the materials is analyzed. Finally, the preparation methods and applications of the above materials are summarized. The low-dimensional group-VA nanomaterials exhibit a variety of crystal structures, high dynamic stability, versatile electronic structures and higher carrier mobility and other characteristics. Such properties make low-dimensional group-VA nanomaterials have a wide range of applications in low-dimensional optoelectronic devices.

Key words: low-dimensional nanomaterial, phosphorene, arsenene, antimonene, bismuthene, two-dimensional semiconductor

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