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人工晶体学报 ›› 2021, Vol. 50 ›› Issue (6): 1023-1028.

• 研究论文 • 上一篇    下一篇

Er掺杂金刚石缺陷的第一性原理研究

谭心, 张博晨, 任元, 陈成斌, 刘岳飞   

  1. 内蒙古科技大学机械工程学院,包头 014010
  • 收稿日期:2021-03-08 出版日期:2021-06-15 发布日期:2021-07-08
  • 作者简介:谭心(1972—),女,内蒙古自治区人,教授。E-mail:heart_tan@126.com
  • 基金资助:
    国家自然科学基金(61765012);内蒙古自然科学基金(2019MS05008);国家重点研发计划(2017YFF0207200, 2017YFF0207203);内蒙古自治区科技创新指导项目(2017CXYD-2,KCBJ2018031)

First-Principle Study of Er-Doped Diamond Defects

TAN Xin, ZHANG Bochen, REN Yuan, CHEN Chengbin, LIU Yuefei   

  1. School of Mechanical Engineering, Inner Mongolia University of Science and Technology, Baotou 014010, China
  • Received:2021-03-08 Online:2021-06-15 Published:2021-07-08

摘要: 本文以第一性原理计算为基础,研究了Er掺杂后金刚石的电子结构、能级跃迁及N、B原子共掺杂对金刚石Er相关缺陷的影响。首先对Er掺杂后金刚石的形成能与结合能进行计算,结果表明掺杂后的稳定结构为Er原子周围存在1个空位的结构,稳定价态为+3价。然后预测零点跃迁能(ZPL)是0.807 eV,对应激发的光子波长为1 536.289 nm。最后对N、B原子共掺杂计算,结果表明N、B原子的掺入可以使形成能降低,增加结构稳定性。Er掺杂金刚石使其在近红外光谱发光,为Er金刚石色心的应用提供了理论依据。

关键词: Er掺杂, 金刚石缺陷, 第一性原理, 电子结构, 能级跃迁, 形成能

Abstract: In this paper, the electronic structure, energy transition, and the effect of co-doping of N and B atoms on Er-doped diamond defects were investigated based on first-principles calculations. First, the defect formation energy and binding energy calculations are performed for Er-doped diamond. The results show that the stable structure of diamond ErV defects is a structure with one vacancy around the Er atom, and the stable valence of +3 valence. The electronic structure of the diamond defect is calculated using this stable structure, and its energy band and energy level structures are obtained. A zero-phonon line (ZPL) of 0.807 eV and emission wavelength of 1 536.289 nm are predicted for the ErV defect. Finally, the calculation of the co-doping of N and B atoms shows that the doping of N and B atoms can reduce the formation energy and increase the structural stability. Er doped diamond makes it emit light in the near infrared spectrum, which provides a theoretical basis for the application of Er diamond color center.

Key words: Er doping, diamond defect, first-principle, electronic structure, energy level transition, formation energy

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