后退火气氛对磁控溅射制备β-Ga2O3薄膜材料的影响

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (6): 1056-1061.

后退火气氛对磁控溅射制备β-Ga₂O₃薄膜材料的影响

姬凯迪¹, 高灿灿¹, 杨发顺^1,2,3, 熊倩¹, 马奎^1,2,3

1.贵州大学电子科学系,贵阳 550025;
2.贵州省微纳电子与软件技术重点实验室,贵阳 550025;
3.半导体功率器件可靠性教育部工程研究中心,贵阳 550025

收稿日期:2021-04-02 出版日期:2021-06-15 发布日期:2021-07-08
通讯作者: 马奎,博士,副教授。E-mail:kma@gzu.edu.cn
作者简介:姬凯迪(1994—),男,陕西省人,硕士研究生。E-mail:1204124952@qq.com
基金资助:
国家自然科学基金(61664004);半导体功率器件可靠性教育部工程研究中心开放基金(ERCME-KFJJ2019-(01))

Effect of Post Annealing Atmosphere on β-Ga₂O₃ Thin Films Prepared by Magnetron Sputtering

JI Kaidi¹, GAO Cancan¹, YANG Fashun^1,2,3, XIONG Qian¹, MA Kui^1,2,3

1. Department of Electronics, Guizhou University, Guiyang 550025, China;
2. Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guiyang 550025, China;
3. Semiconductor Power Device Reliability Engineering Research Center of Ministry of Education, Guiyang 550025, China

Received:2021-04-02 Online:2021-06-15 Published:2021-07-08

摘要/Abstract

摘要： 近年来,宽禁带半导体材料β-Ga₂O₃越来越多地受到关注,在材料制备、掺杂、刻蚀等方面都有广泛研究。射频磁控溅射是常用的β-Ga₂O₃薄膜制备方法之一,后退火处理往往是提高薄膜质量的关键工艺步骤。本文研究后退火工艺中退火温度和退火气氛对射频磁控溅射在C面蓝宝石基底上制备得到的β-Ga₂O₃薄膜材料的影响。X射线衍射和原子力显微镜表征结果表明:在氮气气氛下退火,退火温度为1 000 ℃时得到的β-Ga₂O₃薄膜质量较优;相同的温度下,氧气气氛退火比氮气气氛退火更有利于提升薄膜的结晶性能、降低表面粗糙度;在氧气气氛下,1 000 ℃退火得到的薄膜质量相对比900 ℃退火得到的薄膜质量好。

关键词: 宽禁带半导体, β-Ga₂O₃, 射频磁控溅射, 退火氛围, 结晶性能, 表面粗糙度

Abstract: In recent years, β-Ga₂O₃ has attracted more and more attention as a wide band gap semiconductor material. A large number of researchers all over the world have carried out a lot of studies in preparation, doping and etching of β-Ga₂O₃. Radio frequency magnetron sputtering is one of the most popular methods for preparing β-Ga₂O₃ thin film. And post annealing is usually used to improve the quality of the film. In this paper, effects of annealing temperature and annealing atmosphere on β-Ga₂O₃ thin films on C-plane sapphire substrate prepared by radio frequency magnetron sputtering were investigated. Testing results of XRD and AFM indicate that under nitrogen atmosphere, the quality of β-Ga₂O₃ films annealed at 1 000 ℃ is better. At the same temperature, oxygen atmosphere annealing is better than nitrogen atmosphere annealing to improve the crystallization properties and reduce the surface roughness of the films. And under oxygen atmosphere, the quality of films annealed at 1 000 ℃ is better than that annealed at 900 ℃.

Key words: wide band gap semiconductor, β-Ga₂O₃, radio frequency magnetron sputtering, annealing atmosphere, crystallization property, surface roughness

中图分类号:

O484
O47

姬凯迪, 高灿灿, 杨发顺, 熊倩, 马奎. 后退火气氛对磁控溅射制备β-Ga₂O₃薄膜材料的影响[J]. 人工晶体学报, 2021, 50(6): 1056-1061.

JI Kaidi, GAO Cancan, YANG Fashun, XIONG Qian, MA Kui. Effect of Post Annealing Atmosphere on β-Ga₂O₃ Thin Films Prepared by Magnetron Sputtering[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(6): 1056-1061.

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后退火气氛对磁控溅射制备β-Ga₂O₃薄膜材料的影响

Effect of Post Annealing Atmosphere on β-Ga₂O₃ Thin Films Prepared by Magnetron Sputtering

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