GaAs衬底温度对液滴外延法生长In液滴的影响

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (8): 1431-1437.

GaAs衬底温度对液滴外延法生长In液滴的影响

黄泽琛^1,2,3, 蒋冲^1,2,3, 李耳士^1,2,3, 李家伟^1,2,3, 宋娟^1,2,3, 王一^1,2,3, 郭祥^1,2,3, 罗子江^2,3,4, 丁召^1,2,3

1.贵州大学大数据与信息工程学院,贵阳 550025;
2.贵州大学微纳电子与软件技术重点实验室,贵阳 550025;
3.半导体功率器件可靠性教育部工程研究中心,贵阳 550025;
4.贵州财经大学信息学院,贵阳 550025

收稿日期:2021-03-09 出版日期:2021-08-15 发布日期:2021-09-14
通讯作者: 丁召,教授。E-mail:zding@gzu.edu.cn
作者简介:黄泽琛(1995—),男,贵州省人,硕士研究生。E-mail:452252257@qq.com
基金资助:
国家自然科学基金(61564002,11664005);贵州省科技计划(黔科合基础 [2017] 1055);半导体功率器件可靠性教育部研究中心开放基金(ERCME-KFJJ2019-(07))

Effect of GaAs Substrate Temperature on Indium Droplets Grown by Droplet Epitaxy

HUANG Zechen^1,2,3, JIANG Chong^1,2,3, LI Ershi^1,2,3, LI Jiawei^1,2,3, SONG Juan^1,2,3, WANG Yi^1,2,3, GUO Xiang^1.2.3, LUO Zijiang^2,3,4, DING Zhao^1,2,3

1. College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China;
2. Key Laboratory of Micro-Nano-Electronics and Software Technology of Guizhou Province, Guiyang 550025, China;
3. Power Semiconductor Device Reliability Engineering Center of the Ministry of Education, Guiyang 550025, China;
4. College of Information, Guizhou University of Finance and Economics, Guiyang 550025, China

Received:2021-03-09 Online:2021-08-15 Published:2021-09-14

摘要/Abstract

摘要： 采用液滴外延法在GaAs(001)衬底上生长In液滴,利用原子力显微镜(AFM)对不同衬底温度下生长的样品进行表征,观察其表面形貌。研究表明In液滴的生长对衬底温度十分敏感,随着衬底温度的升高,液滴密度逐渐减小,液滴尺寸逐渐增大。分析了In液滴在不同衬底温度形成过程的物理机制,解释了该实验现象的原因。根据成核理论中最大团簇密度与衬底温度之间的关系,拟合计算出In液滴密度与衬底温度满足的函数关系为n_x=5.17 exp(0.69 eV/kT)。

关键词: GaAs, In液滴, 液滴外延, 衬底温度, 团簇密度

Abstract: Indium droplets were grown on GaAs(001) substrates by droplet epitaxy method. The samples grown at different temperatures were characterized by atomic force microscope (AFM), and the surface morphology was observed. The study illustrates that indium droplets are very sensitive to the substrate temperature. The droplet density decreases with the increase of the substrate temperature, and its size increases with the increase of the substrate temperature. The physical mechanism of indium droplet formation at different substrate temperatures was analyzed, and the reason was explained. According to the relationship between the maximal cluster density and substrate temperature in nucleation theory, the functional relationship between the density of indium droplets and the substrate temperature is calculated as n_x=5.17 exp(0.69 eV/kT).

Key words: GaAs, indium droplet, droplet epitaxy, substrate temperature, cluster density

中图分类号:

TN304

黄泽琛, 蒋冲, 李耳士, 李家伟, 宋娟, 王一, 郭祥, 罗子江, 丁召. GaAs衬底温度对液滴外延法生长In液滴的影响[J]. 人工晶体学报, 2021, 50(8): 1431-1437.

HUANG Zechen, JIANG Chong, LI Ershi, LI Jiawei, SONG Juan, WANG Yi, GUO Xiang, LUO Zijiang, DING Zhao. Effect of GaAs Substrate Temperature on Indium Droplets Grown by Droplet Epitaxy[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(8): 1431-1437.

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