以溶液法PEDOT∶PSS作为空穴传输层的免光刻背接触硅太阳电池

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (8): 1534-1540.

以溶液法PEDOT∶PSS作为空穴传输层的免光刻背接触硅太阳电池

孙纵横, 沈荣宗, 石艳斌, 周玉荣, 周玉琴, 刘丰珍

中国科学院大学材料与光电研究中心&材料科学与光电技术学院,北京 100049

收稿日期:2021-05-06 出版日期:2021-08-15 发布日期:2021-09-14
通讯作者: 周玉荣,博士,副教授。E-mail:zhouyurong@ucas.ac.cn刘丰珍,博士,教授。E-mail:liufz@ucas.ac.cn
作者简介:孙纵横(1997—),男,江西省人,硕士研究生。E-mail:sunzongheng18@mails.ucas.ac.cn
基金资助:
国家自然科学基金青年科学基金(61604153)

Lithography-Free Interdigitated Back Contact Silicon Solar Cells with Solution-Processed PEDOT∶PSS as the Efficient Hole Transport Layer

SUN Zongheng, SHEN Rongzong, SHI Yanbin, ZHOU Yurong, ZHOU Yuqin, LIU Fengzhen

College of Materials Science and Opto-Electronic Technology & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2021-05-06 Online:2021-08-15 Published:2021-09-14

摘要/Abstract

摘要： 对PEDOT∶PSS(聚(3,4亚乙二氧基噻吩)-聚(苯乙烯磺酸))薄膜与Mg、Al和Ag三种金属接触后的I-V特性曲线进行了测试分析,发现Mg和Al与PEDOT∶PSS薄膜接触后呈现高电阻特性,可以起到绝缘隔离层的作用。在此基础上,以PEDOT∶PSS作为空穴传输层,以LiF作为电子传输层,以PEDOT∶PSS与Mg/Al的接触作为隔离层,不采用光刻工艺,设计制备了只需一次掩膜工艺的背接触太阳电池。通过在PEDOT∶PSS上采用热丝氧化升华技术制备MoO_x层,通过优化LiF薄膜的厚度,在抛光硅片上初步实现了开路电压最高为592 mV和效率最高为10.13%的背接触太阳电池。采用金属辅助腐蚀制备硅纳米线陷光结构改善前表面陷光效果,得到了开路电压为587 mV,短路电流密度为35.57 mA/cm²,填充因子为69.97%,效率为14.61%的背接触太阳电池。

关键词: 背接触硅基太阳电池, 免光刻工艺, 掩膜技术, PEDOT∶PSS空穴传输层, 溶液法

Abstract: The I-V characteristics of the PEDOT∶PSS/metal hetero-contacts with different metals of Mg, Al and Ag were investigated. It's found that the resistivity of the Mg(Al)/PEDOT∶PSS contact is considerably high, which may play the role of an insulated layer. Based on this phenomenon, a simple lithography-free interdigitated back contact silicon solar cell using PEDOT∶PSS as the hole transport layer and LiF as the electron transport layer was designed and fabricated. During the fabrication of the solar cells, shadow mask was used only once attributed to the insulating effect of the Mg/Al/PEDOT∶PSS contact. Then a MoO_x layer grown by hot wire oxidation-sublimation deposition technique was overlaid on PEDOT∶PSS and a LiF thin film with appropriate thickness was thermal evaporated into the interface between Si and Mg/Al to improve the ability of carriers collection of the device. And the interdigitated back contact silicon solar cells with a highest VOC of 592 mV and a best efficiency of 10.13% are achieved. Using metal-assisted chemical etching to prepare silicon nanowire structure which improves the effect of front surface light trapping, an interdigitated back contact solar cell with a V_OC of 587 mV, a J_SC of 35.57 mA/cm², a FF of 69.97%, and an efficiency of 14.61% is fabricated.

Key words: interdigitated back contact silicon solar cell, lithography-free process, shadow mask technology, PEDOT∶PSS hole transport layer, solution method

中图分类号:

TM914.4

孙纵横, 沈荣宗, 石艳斌, 周玉荣, 周玉琴, 刘丰珍. 以溶液法PEDOT∶PSS作为空穴传输层的免光刻背接触硅太阳电池[J]. 人工晶体学报, 2021, 50(8): 1534-1540.

SUN Zongheng, SHEN Rongzong, SHI Yanbin, ZHOU Yurong, ZHOU Yuqin, LIU Fengzhen. Lithography-Free Interdigitated Back Contact Silicon Solar Cells with Solution-Processed PEDOT∶PSS as the Efficient Hole Transport Layer[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(8): 1534-1540.

参考文献

[1] YOSHIKAWA K, KAWASAKI H, YOSHIDA W, et al. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%[J]. Nature Energy, 2017, 2: 17032.
[2] SIVARAMAKRISHNAN RADHAKRISHNAN H, UDDIN M D G, XU M L, et al. A novel silicon heterojunction IBC process flow using partial etching of doped a-Si∶H to switch from hole contact to electron contact in situ with efficiencies close to 23%[J]. Progress in Photovoltaics: Research and Applications, 2019, 27(11): 959-970.
[3] VASUDEVAN R, HARRISON S, D'ALONZO G, et al. Laser-induced BSF: a new approach to simplify IBC-SHJ solar cell fabrication[J]. AIP Conference Proceedings, 2018, 1999(1): 040024.
[4] WAGNER P, STANG J C, MEWS M, et al. Interdigitated back contact silicon heterojunction solar cells: towards an industrially applicable structuring method[J]. AIP Conference Proceedings, 2018, 1999(1): 060001.
[5] TUCCI M, SERENELLI L, SALZA E, et al. Innovative design of amorphous/crystalline silicon heterojunction solar cell[J]. Thin Solid Films, 2008, 516(20): 6771-6774.
[6] LI F C, SUN Z H, ZHOU Y R, et al. Lithography-free and dopant-free back-contact silicon heterojunction solar cells with solution-processed TiO₂ as the efficient electron selective layer[J]. Solar Energy Materials and Solar Cells, 2019, 203: 110196.
[7] TOMASI A, PAVIET-SALOMON B, JEANGROS Q, et al. Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth[J]. Nature Energy, 2017, 2: 17062.
[8] BATTAGLIA C, YIN X T, ZHENG M, et al. Hole selective MoO_x contact for silicon solar cells[J]. Nano Letters, 2014, 14(2): 967-971.
[9] GEISSBÜHLER J, WERNER J, MARTIN DE NICOLAS S, et al. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector[J]. Applied Physics Letters, 2015, 107(8): 081601.
[10] YANG X B, ZHENG P T, BI Q Y, et al. Silicon heterojunction solar cells with electron selective TiO_x contact[J]. Solar Energy Materials and Solar Cells, 2016, 150: 32-38.
[11] MASMITJÀ G, GERLING L G, ORTEGA P, et al. V₂O_x-based hole-selective contacts for c-Si interdigitated back-contacted solar cells[J]. Journal of Materials Chemistry A, 2017, 5(19): 9182-9189.
[12] SHEN X J, SUN B Q, LIU D, et al. Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture[J]. Journal of the American Chemical Society, 2011, 133(48): 19408-19415.
[13] HE J, GAO P Q, LIAO M D, et al. Realization of 13.6% efficiency on 20 μm thick Si/organic hybrid heterojunction solar cells via advanced nanotexturing and surface recombination suppression[J]. ACS Nano, 2015, 9(6): 6522-6531.
[14] WU S, CUI W, AGHDASSI N, et al. Nanostructured Si/organic heterojunction solar cells with high open-circuit voltage via improving junction quality[J]. Advanced Functional Materials, 2016, 26(28): 5035-5041.
[15] HE J, GAO P Q, YANG Z H, et al. Silicon/organic hybrid solar cells with 16.2% efficiency and improved stability by formation of conformal heterojunction coating and moisture-resistant capping layer[J]. Advanced Materials, 2017, 29(15): 1606321.
[16] SHEN R, SUN Z, SHI Y, et al. Solution processed organic/silicon nanowires hybrid heterojunction solar cells using organosilane incorporated poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonate) as hole transport layers[J]. ACS Nano, 2021.
[17] ZHANG X S, YANG D, YANG Z, et al. Improved PEDOT∶PSS/c-Si hybrid solar cell using inverted structure and effective passivation[J]. Scientific Reports, 2016, 6: 35091.
[18] LIN H, DING D, WANG Z L, et al. Realization of interdigitated back contact silicon solar cells by using dopant-free heterocontacts for both polarities[J]. Nano Energy, 2018, 50: 777-784.
[19] LI F C, ZHOU Y R, YANG Y, et al. Silicon heterojunction solar cells with MoO_x hole-selective layer by hot wire oxidation-sublimation deposition[J]. Solar RRL, 2020, 4(3): 1900514.
[20] SHI H, LIU C C, JIANG Q L, et al. Effective approaches to improve the electrical conductivity of PEDOT∶PSS: a review[J]. Advanced Electronic Materials, 2015, 1(4): 1500017.
[21] CAMERON J, SKABARA P J. The damaging effects of the acidity in PEDOT∶PSS on semiconductor device performance and solutions based on non-acidic alternatives[J]. Materials Horizons, 2020, 7(7): 1759-1772.
[22] HAMMOND S R, MEYER J, WIDJONARKO N E, et al. Low-temperature, solution-processed molybdenum oxide hole-collection layer for organic photovoltaics[J]. Journal of Materials Chemistry, 2012, 22(7): 3249.
[23] LIU R Y, LEE S T, SUN B Q. 13.8% efficiency hybrid Si/organic heterojunction solar cells with MoO₃ film as antireflection and inversion induced layer[J]. Advanced Materials, 2014, 26(34): 6007-6012.