直拉单晶炉加热系统的优化设计与分析

摘要/Abstract

摘要： 降低单晶硅电池的生产成本,是提高光伏产业效益的关键。在等径拉晶过程中,采用分段加热可以减少加热器的输出功率,降低加热系统的能耗。本文在分析单晶硅拉晶过程中加热区域及能耗的基础上,提出细分加热器结构改进加热电路对单晶炉加热系统进行优化。实验设计了两段加热和三段加热两种模型(即方案1和方案2),并分别将其导入有限元仿真软件进行模拟实验。结果表明,两段加热对拉晶过程的影响较大,三段加热对拉晶过程的影响较小,后者更能保证拉晶过程的稳定进行。能耗计算发现,前者能耗降低为6.98％,而后者能耗降低达到了9.49％。因此,采用三段加热的优化设计更有利于降低光伏企业的生产成本。

关键词: 单晶炉, 加热系统, 加热器, 优化设计, 能耗降低

Abstract: Reducing the production cost of the monocrystalline silicon battery is the key to improve the benifits of the photovoltaic industry. During the equal-diameter crystal pulling process, the sectional heating can reduce the output power of the heater and lower the energy consumption of the heating system. Based on the analysis of the heating area and energy consumption in the pulling process of monocrystalline silicon, this paper proposes to optimize the heating system of single crystal furnace via subdividing the heater structure and improving the heating circuit. Two-stage heating and three-stage heating (i.e., Scheme 1 and Scheme 2, respectively) models were designed in the experiment, and they were imported into the finite element simulation software for simulation. The results show that the two-stage heating model possesses a greater effect on the pulling process, and the three-stage heating counterpart shows a smaller effect on the pulling process, which can better ensure the stability of the pulling process. The energy consumption calculation shows that the energy consumption of the former is reduced by 6.98%, while the energy consumption of the latter is reduced by 9.49%. Therefore, three-stage heating is more conducive to reducing the production cost of photovoltaic enterprises.

Key words: single crystal furnace, heating system, heater, optimization design, reduce energy consumption

中图分类号:

林光伟, 王珊, 张西亚, 高俊伟, 高德东. 直拉单晶炉加热系统的优化设计与分析[J]. 人工晶体学报, 2021, 50(8): 1541-1551.

LIN Guangwei, WANG Shan, ZHANG Xiya, GAO Junwei, GAO Dedong. Optimal Design and Analysis of Heating System of Czochralski Single Crystal Furnace[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(8): 1541-1551.

参考文献

[1] GOETZBERGER A, KNOBLOCH J, VOß B. Crystalline silicon solar cells[M]. Chichester, UK: John Wiley & Sons, Ltd, 2014.
[2] HOU G F, SUN H H, JIANG Z Y, et al. Life cycle assessment of grid-connected photovoltaic power generation from crystalline silicon solar modules in China[J]. Applied Energy, 2016, 164: 882-890.
[3] 吕菲,耿博耘.异型加热器在直拉硅单晶炉中的应用[J].中国电子科学研究院学报,2015,10(6):646-651.
LV F, GENG B Y. Application of irregular heater in Cz silicon crystal furnace[J]. Journal of China Academy of Electronics and Information Technology, 2015, 10(6): 646-651(in Chinese).
[4] 耿博耘,韩焕鹏.直拉单晶炉减薄型加热器的数值模拟与实验分析[J].电子工业专用设备,2015,44(3):26-31.
GENG B Y, HAN H P. Numerical simulation and experiment analysis of thinned heater in Czochralski crystal furnace[J]. Equipment for Electronic Products Manufacturing, 2015, 44(3): 26-31(in Chinese).
[5] CAO J W, GAO Y, CHEN Y, et al. Simulation aided hot zone design for faster growth of Cz silicon mono crystals[J]. Rare Metals, 2011, 30(2): 155-159.
[6] 曹建伟.直拉式单晶硅生长炉的关键技术研究[D].杭州:浙江大学,2010:92-96.
CAO J W. Research on the key technology of CZ silicon crystal growth furnace[D]. Hangzhou: Zhejiang University, 2010: 92-96(in Chinese).
[7] NAM W, HAHN Y, BAIK S. Local optimization of graphite heater to save a power consumption of Czochralski Si ingot grower for PV application[J]. Energy Procedia, 2017, 124: 767-776.
[8] 高忙忙,朱博,李进,等.加热器/坩埚相对位置对ø200 mm单晶硅生长过程中温度场和晶体质量的影响[J].硅酸盐通报,2016,35(11):3607-3612.
GAO M M, ZHU B, LI J, et al. Influence of heater/crucible position on the thermal field and crystal quality in the preparation of single crystal silicon with ø200 mm[J]. Bulletin of the Chinese Ceramic Society, 2016, 35(11): 3607-3612(in Chinese).
[9] 高农农,葛林.加热器直径对200 mm太阳能级单晶硅加热效率、能耗和氧含量的影响[J].硅酸盐通报,2015,34(12):3658-3662.
GAO N N, GE L. Influence of heater diameter on heating efficiency, power consumption and oxygen concentration in the solar-grade single silicon[J]. Bulletin of the Chinese Ceramic Society, 2015, 34(12): 3658-3662(in Chinese).
[10] 杨轶涵,李进,王长春,等.热屏结构对泡生法蓝宝石单晶炉功率影响研究[J].人工晶体学报,2017,46(4):589-593.
YANG Y H, LI J, WANG C C, et al. Effect of heat shield structure on the power of Kyropoulos sapphire single crystal furnace[J]. Journal of Synthetic Crystals, 2017, 46(4): 589-593(in Chinese).
[11] 张志强,黄振飞,黄强.单晶炉热场设计与优化[C].第十一届中国光伏大会暨展览会会议论文集,2010.
ZHANG Z Q, HUANG Z F, HUANG Q. Design and optimization of heat field of single crystal furnace [C]. The 11th China photovoltaic conference and exposition conference Proceedings, 2010.
[12] 张波,赵彩霞,赵科巍,等.单晶炉高效热场的优化与应用[J].太阳能,2017(11):33-35+63.
ZHANG B, ZHAO C X, ZHAO K W, et al. Optimization and application of high efficiency thermal field in single crystal furnace[J]. Solar Energy, 2017(11): 33-35+63(in Chinese).
[13] 王蕾.高拉速低能耗Φ200 mm直拉硅单晶用热场的设计与分析[D].西安:西安理工大学,2016:31-56.
WANG L. Design and analyse of Φ200 mm Czochralski mono-crystalline silicon hot-zone of high growth rate and low power consupmtion[D]. Xi'an: Xi'an University of Technology, 2016: 31-56(in Chinese).
[14] 邓树军,高宇,姜舰,等.热场结构对直拉硅单晶生长能耗影响分析[J].半导体技术,2010,35(12):1183-1185.
DENG S J, GAO Y, JIANG J, et al. Impact analysis of hot zone structure on power consumption during Cz silicon growth[J]. Semiconductor Technology, 2010, 35(12): 1183-1185(in Chinese).
[15] HUANG L Y, LEE P C, HSIEH C K, et al. On the hot-zone design of Czochralski silicon growth for photovoltaic applications[J]. Journal of Crystal Growth, 2004, 261(4): 433-443.
[16] 黄建明,杨晓欣.直拉硅单晶热场加热器设计分析[J].炭素技术,2013,32(6):74-77.
HUANG J M, YANG X X. Analysis of hot zone heater for single crystal silicon by Czochralski technique[J]. Carbon Techniques, 2013, 32(6): 74-77(in Chinese).
[17] 陶智桂.Cz全自动单晶炉电控系统设计[D].北京:北京工业大学,2016:18-20.
TAO Z G. Design of electric control system of Cz automatic single crystal furnace[D]. Beijing: Beijing University of Technology, 2016: 18-20(in Chinese).
[18] 胡洁微.单晶炉温度控制装置的研究[D].锦州: 辽宁工业大学,2007:14-20.
HU J W. Research on the temperature control device of the single crystal furnace[D]. Jinzhou: Liaoning Institute of Technology, 2007: 14-20(in Chinese).
[19] 刘威.单晶炉热场加热器设计探究[J].科技风,2013(11):14.
LIU W. Research on the design of heater for single crystal furnace[J]. Technology Wind, 2013(11): 14(in Chinese).
[20] 张西亚,高德东,王珊,等.直拉法单晶炉随动式加热器设计[J].人工晶体学报,2021,50(2):361-367+406.
ZHANG X Y, GAO D D, WANG S, et al. Design of follow-up heater for Czochralski single crystal furnace[J]. Journal of Synthetic Crystals, 2021, 50(2): 361-367+406(in Chinese).
[21] WEN S T, JIANG D C, SHI S, et al. Determination and controlling of crystal growth rate during silicon purification by directional solidification[J]. Vacuum, 2016, 125: 75-80.