碳化硅单晶生长用高纯碳化硅粉体的研究进展

摘要/Abstract

摘要： 碳化硅(SiC)以其宽带隙、高临界击穿场强、高热导率、高载流子饱和迁移率等优点,被认为是目前较具发展前景的半导体材料之一。近年来,物理气相传输(PVT)法在制备大尺寸、高质量SiC单晶衬底方面取得了重大突破,进一步推动了SiC在高压、高频、高温电子器件领域的应用。SiC粉体是PVT法生长SiC单晶的原料,其纯度会直接影响SiC单晶的杂质含量,从而影响SiC单晶的电学性质,其中生长高质量的半绝缘SiC单晶更是直接受限于SiC粉体中N元素的含量。因此,合成高纯的SiC粉体是PVT法生长高质量SiC单晶的关键。本文主要介绍了高纯SiC粉体的合成方法及研究现状,重点对气相法和固相法合成高纯SiC粉体的优缺点进行了评述,并提出了今后高纯SiC粉体合成的发展方向。

关键词: 单晶, 高纯, SiC粉体, 半导体, 物理气相传输法

Abstract: SiC is considered as one of the more promising semiconductor materials because of its advantages such as wide band gap, high critical breakdown field strength, high thermal conductivity and high carrier saturation mobility. In recent years, physical vapor transport (PVT) method has made great breakthroughs in the preparation of large size and high quality SiC single crystal substrates, further promoting the application of SiC in the field of high voltage, high frequency and high temperature electronic devices. SiC powder is the raw material of PVT method to grow SiC single crystal. The purity of powder will directly affect the impurity content of SiC single crystal, so as to affect the electrical properties of SiC single crystal. The growth of high quality semi-insulating SiC single crystal is directly limited by the content of N element in the SiC powder. Therefore, the synthesis of high-purity SiC powder is the key to the growth of high-quality SiC single crystal by PVT method. This paper mainly introduces the synthesis methods and research status of high purity SiC powder, the advantages and disadvantages of gas-phase and solid-phase synthesis of high purity SiC powders are reviewed, and the development direction of high purity SiC powders synthesis in the future is put forward.

Key words: single crystal, high purity, SiC powder, semiconductor, physical vapor transport method

中图分类号:

罗昊, 张序清, 杨德仁, 皮孝东. 碳化硅单晶生长用高纯碳化硅粉体的研究进展[J]. 人工晶体学报, 2021, 50(8): 1562-1574.

LUO Hao, ZHANG Xuqing, YANG Deren, PI Xiaodong. Research Progress on High-Purity SiC Powder for Single Crystal SiC Growth[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(8): 1562-1574.

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