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人工晶体学报 ›› 2022, Vol. 51 ›› Issue (12): 2014-2021.

• 研究论文 • 上一篇    下一篇

5英寸锑化铟晶片加工及表征

赵超, 孔忠弟, 董涛, 吴卿, 折伟林, 王小龙, 徐鹏艳, 李乾, 李达, 李聪聪   

  1. 华北光电技术研究所,北京 100015
  • 收稿日期:2022-05-26 出版日期:2022-12-15 发布日期:2023-01-09
  • 作者简介:赵 超(1986—),男,山东省人,高级工程师。E-mail:zhaochaoxd@163.com

Processing and Characterization of 5 Inch InSb Wafer

ZHAO Chao, KONG Zhongdi, DONG Tao, WU Qing, SHE Weilin, WANG Xiaolong, XU Pengyan, LI Qian, LI Da, LI Congcong   

  1. North China Research Institute of Electro-Optics, Beijing 100015, China
  • Received:2022-05-26 Online:2022-12-15 Published:2023-01-09

摘要: 锑化铟(InSb)材料因其特殊的性质被广泛用于红外光电探测等领域。随着更大面阵中波红外焦平面探测器的发展以及对低成本InSb红外探测器的需求,所需的晶片材料尺寸也日益增加。本文通过采用新结构石墨托以及高精度低损伤单线切割实现了5英寸InSb晶体定向断段;采用低损伤边缘倒角技术同时优化研磨参数改善了5英寸InSb晶片研磨;通过优化贴片工序提高了5英寸InSb晶片抛光后的平整度;通过优化抛光液pH值以及配比提高了5英寸InSb晶片表面质量。同时,使用X射线晶体定向仪、原子力显微镜等测试仪器对5英寸InSb晶片的晶向及偏差、抛光表面宏观质量、几何参数、表面粗糙度、晶格质量进行了测试表征。测试结果表明,采用优化后的加工工艺制备出了高质量的5英寸InSb晶片,能够满足InSb红外探测器制备需求。

关键词: 锑化铟, 5英寸, 晶片, 加工, 高质量, 红外探测器

Abstract: Indium antimonide (InSb) materials have been widely used in infrared photoelectric detectors and other fields because of their special properties. With the development of larger arrays of mid-infrared focal plane detectors and a growing demand for low-cost InSb infrared detectors, the desired size for the InSb wafers also increases. In this paper, a new structure of graphite rest and high precision low damage single line cutting were combined to develop a 5 inch InSb crystal oriented segmentation. Low damage edge chamfering techniques while optimizing grinding parameters were used to improve the grinding of 5 inch InSb wafers. An optimized mounting process were used to further improve the flatness of polished 5 inch InSb wafers. Furthermore, the pH value and polishing solution ratio were optimized to improve the surface quality of 5 inch InSb wafers. At the same time, the crystal orientation and deviation, polished surface macroscopic quality, geometric parameters, surface roughness and lattice quality of 5 inch InSb wafers were analyzed using an X-ray crystal orientation instrument and atomic force microscope. The test results show that, high quality 5 inch InSb wafers can be created more readily by this newly optimized process, helping to meet the current demand for InSb materials in IR detectors and other fields.

Key words: InSb, 5 inch, wafer, processing, high quality, infrared detector

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