PVT法同质外延制备大尺寸Al极性氮化铝晶体生长工艺及其表征分析研究

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (2): 208-215.

PVT法同质外延制备大尺寸Al极性氮化铝晶体生长工艺及其表征分析研究

李哲¹, 张刚¹, 付丹扬¹, 王琦琨², 雷丹², 任忠鸣¹, 吴亮²

1.上海大学材料科学与工程学院,上海市钢铁冶金新技术开发应用重点实验室,省部共建高品质特殊钢冶金与制备国家重点实验室,上海 200444;
2.奥趋光电技术(杭州)有限公司,杭州 311106

收稿日期:2021-11-02 出版日期:2022-02-15 发布日期:2022-03-14
通讯作者: 任忠鸣,博士,教授。E-mail:zmren@shu.edu.cn;吴亮,博士。E-mail:Jason.wu@utrendtech.com
作者简介:李哲(1996—),男,安徽省人,硕士研究生。E-mail:lizhe1996@shu.edu.cn
基金资助:
国家自然科学基金(61874071);浙江省重点研发计划(2020C01145)

Homoepitaxial Growth and Characterization of Large-Size Al-Polar AlN Single Crystals by PVT Method

LI Zhe¹, ZHANG Gang¹, FU Danyang¹, WANG Qikun², LEI Dan², REN Zhongming¹, WU Liang²

1. State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of Advanced Ferrous Metallurgy, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;
2. Ultratrend Technologies Inc, Hangzhou 311106, China

Received:2021-11-02 Online:2022-02-15 Published:2022-03-14

摘要/Abstract

摘要： 本文基于自主设计的氮化铝生长炉,开展了四组不同工艺条件下Al极性面氮化铝籽晶同质外延生长氮化铝单晶的生长特征及其结晶质量表征研究。研究发现:不同工艺条件下生长的晶体的拉曼图谱E₂(high)特征峰峰位表明,晶体内部均存在较小的拉应力;在坩埚顶部在相对较高温度2 210 ℃、坩埚底部与顶部温差42 ℃的低过饱和度生长条件下,晶体表面光滑,呈现阶梯流生长形貌,并具有典型的氮化铝单晶生长习性面,晶体初始扩张角大于40°,高分辨率X射线衍射(HRXRD)测得0002、1012反射摇摆曲线及拉曼光谱检测结果表明,该条件下生长的氮化铝晶体结晶质量优异,并可实现快速扩径。基于该生长条件,通过外延生长后成功获得尺寸ϕ45~47 mm的氮化铝单晶锭,相关表征结果表明生长的氮化铝晶体具有优越的结晶性能。

关键词: 氮化铝, 物理气相传输法, 同质外延, 生长条件, 结晶质量

Abstract: Based on our in-house aluminum nitride (AlN) crystal growth reactor, growth characteristics and material characterization of homoepitaxial AlN growth on Al-polar AlN seeds under four different growth conditions by PVT method were investigated in detail. The results show that small tensile stresses exist in all crystals grown under four growth conditions revealed by Raman spectroscopy. When the temperature of the crucible top is 2 210 ℃, the temperature difference between the crucible bottom and top is 42 ℃, the AlN crystal is grown under a low supersaturation condition with a step-flow growth mode. And the as-grown crystal has smooth surfaces with typical AlN growth habits. The initial expansion angle of the crystal growth is larger than 40°, which indicates that quick diameter expansion is possible for AlN crystal growth. The high quality of the obtained crystals is confirmed by the rocking curves of 0002, 1012 reflections with high-resolution X-ray diffraction and Raman spectroscopy. Finally, an AlN crystal up to 45 mm to 47 mm in diameter is homoepitaxially grown successfully under the optimized growth conditions, and characterization results confirm its excellent quality and crystallinity.

Key words: AlN, PVT, homoepitaxial growth, growth condition, crystallinity

中图分类号:

O782

李哲, 张刚, 付丹扬, 王琦琨, 雷丹, 任忠鸣, 吴亮. PVT法同质外延制备大尺寸Al极性氮化铝晶体生长工艺及其表征分析研究[J]. 人工晶体学报, 2022, 51(2): 208-215.

LI Zhe, ZHANG Gang, FU Danyang, WANG Qikun, LEI Dan, REN Zhongming, WU Liang. Homoepitaxial Growth and Characterization of Large-Size Al-Polar AlN Single Crystals by PVT Method[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(2): 208-215.

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