ε-(AlxGa1-x)2O3/ε-Ga2O3异质结电子输运性质研究

摘要/Abstract

摘要： Ga₂O₃是一种新兴的宽带隙半导体,在电力和射频电子系统中具有潜在的应用前景。前期研究以β-Ga₂O₃为主,并且已经对β-(Al_xGa_1-x)₂O₃/Ga₂O₃异质结构中的二维电子气(2DEG)进行了理论计算,本文主要研究ε-(Al_xGa_1-x)₂O₃作为势垒层对ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃异质结电子输运性质的影响,首先介绍了ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃异质结的结构和性质,分析计算了由于ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃异质结的自发极化和压电极化所产生的极化面电荷密度,以及极化对2DEG浓度产生的影响,接着分析了在不同Al摩尔组分下,ε-(Al_xGa_1-x)₂O₃势垒层厚度与合金无序散射、界面粗糙度散射和极性光学声子散射之间的关系。最后通过计算得出结论:界面粗糙度散射和极性光学声子散射对ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃异质结的电子输运性质有重要影响,合金无序散射对异质结的输运性质影响较小;2DEG浓度、合金无序散射、界面粗糙度散射和极性光学声子散射的电子迁移率强弱由ε-(Al_xGa_1-x)₂O₃势垒层的厚度和Al摩尔组分共同决定。

关键词: 2DEG浓度, 电子迁移率, ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃异质结, 合金无序散射, 界面粗糙度散射, 极性光学声子散射

Abstract: Ga₂O₃is an emerging wide bandgap semiconductor with potential applications in power and RF electronic systems. Previous studies have focused on β-Ga₂O₃, and theoretical caculations have been made on the two-dimensional electronic gas(2DEG) in β-(Al_xGa_1-x)₂O₃/Ga₂O₃ heterojunction. In this paper, the effect of ε-(Al_xGa_1-x)₂O₃ as a potential barrier on the electron transport properties of ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ heterojunction was studied. Firstly, the structure and properties of ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ heterojunction are introduced. The charge density on the polarization surface caused by spontaneous polarization and piezoelectric polarization of ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ heterojunction and the effect of polarization on the concentration of 2DEG were analyzed and calculated. Then, the relationship between ε-(Al_xGa_1-x)₂O₃ barrier thickness and alloy disorder scattering, interface roughness scattering and polar optical phonon scattering were analyzed under different Al mole composition. Finally, it is concluded that the interface roughness scattering and polar optical phonon scattering have important effects on the electron transport properties of ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ heterojunction, and the alloy disorder scattering has little effect on the electron transport properties of ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ heterojunction. The electron mobility of 2DEG concentration, alloy disorder scattering, interface roughness scattering and polar optical phonon scattering are determined by the thickness of ε-(Al_xGa_1-x)₂O₃ barrier layer and the Al mole composition.

Key words: 2DEG concentration, electron mobility, ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ heterojunction, alloy disorder scattering, interface roughness scattering, polar optical phonon scattering

中图分类号:

白雅楠, 吕燕伍. ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃异质结电子输运性质研究[J]. 人工晶体学报, 2022, 51(3): 441-449.

BAI Yanan, LYU Yanwu. Electron Transport Properties of ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ Heterojunction[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(3): 441-449.

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ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃异质结电子输运性质研究

Electron Transport Properties of ε-(Al_xGa_1-x)₂O₃/ε-Ga₂O₃ Heterojunction

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