高居里温度铁电单晶PIN-PT的机电性能

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (4): 579-586.

高居里温度铁电单晶PIN-PT的机电性能

刘曼曼¹, 汪跃群², 熊俊杰¹, 张文杰¹, 孔舒燕¹, 杨晓明¹, 王祖建¹, 龙西法¹, 何超¹

1.中国科学院福建物质结构研究所,福州 350002;
2.中国船舶集团第七一五研究所,杭州 310023

收稿日期:2022-02-16 出版日期:2022-04-15 发布日期:2022-05-16
通讯作者: 何超,博士,研究员。E-mail:hechao@fjirsm.ac.cn
作者简介:刘曼曼(1996—),女,河南省人,硕士研究生。E-mail:liumanman@fjirsm.ac.cn
基金资助:
中国科学院重点部署项目(ZDRW-CN-2021-3);福建省工业引导项目(2020H0038)

Electromechanical Properties of Ferroelectric Single Crystal PIN-PT with High Curie Temperature

LIU Manman¹, WANG Yuequn², XIONG Junjie¹, ZHANG Wenjie¹, KONG Shuyan¹, YANG Xiaoming¹, WANG Zujian¹, LONG Xifa¹, HE Chao¹

1. Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou 350002, China;
2. Hangzhou Applied Acoustics Research Institute, Hangzhou 310023, China

Received:2022-02-16 Online:2022-04-15 Published:2022-05-16

摘要/Abstract

摘要： 弛豫铁电单晶Pb(In_1/2Nb_1/2)O₃-PbTiO₃(PIN-PT)相较于常用的Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃(PMN-PT)具有更高的居里温度,在高稳定性、高性能的传感器、换能器方面具有应用前景。本工作采用谐振法研究了[001]方向极化的0.66PIN-0.34PT铁电单晶的全矩阵机电性能参数。0.66PIN-0.34PT 单晶的三方-四方相变温度(T_RT)约为160 ℃,居里温度(T_C)约为260 ℃,室温压电系数d₃₃、d₃₁、d₁₅分别为1 340 pC/N、-780 pC/N、321 pC/N,介电常数ε^T₃₃、ε^S₃₃、ε^T₁₁、ε^S₁₁分别为2 700、905、2 210、1 927,机电耦合系数 k₃₃、k₃₁、k₁₅、k_t分别为 87%、58%、38%、61%。其纵向压电常数(d₃₃)和纵向机电耦合系数(k₃₃)小于 PMN-PT 单晶,但是横向压电性能(d₃₁)和剪切压电性能(d₁₅)都略高于PMN-PT单晶。另外,研究了机电耦合性能随温度的变化趋势,发现0.66PIN-0.34PT单晶在150 ℃以下有较好的温度稳定性。

关键词: PIN-PT, 弛豫铁电单晶, 全矩阵参数, 压电性能, 机电性能, 传感器

Abstract: Relaxor ferroelectric single crystal Pb(In_1/2Nb_1/2)O₃-PbTiO₃ (PIN-PT) has a higher Curie temperature than Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (PMN-PT), which has a prospect in the application of sensors and transducers requiring high stability and high performance. In this work, the full matrix mechanical and electrical properties of [001]-poled 0.66PIN-0.34PT ferroelectric single crystal were studied by resonance method. The rhombohedral-tetragonal transformation temperature (T_RT) and Curie temperature (T_C) of 0.66PIN-0.34PT single crystal are 160 ℃ and 260 ℃, respectively. The room temperature piezoelectric coefficients d₃₃, d₃₁ and d₁₅ of 0.66PIN-0.34PT ferroelectric single crystal are 1 340 pC/N, -780 pC/N and 321 pC/N, respectively. The dielectric constants ε^T₃₃, ε^S₃₃, ε^T₁₁, ε^S₁₁ are 2 700, 905, 2 210, 1 927, respectively. The electromechanical coupling coefficients k₃₃, k₃₁, k₁₅, k_t are 87%, 58%, 38%, 61%, respectively. The value of piezoelectric constant (d₃₃) and electromechanical coupling coefficient (k₃₃) of 0.66PIN-0.34PT single crystal are smaller than those of PMN-PT single crystal, but the transverse piezoelectric properties (d₃₁) and shear piezoelectric properties (d₁₅) are slightly higher than those of PMN-PT single crystal. In addition, the trend of variation in electromechanical coupling performance was studied, and it is found that 0.66PIN-0.34PT single crystal has good temperature stability below 150 ℃.

Key words: PIN-PT, relaxor ferroelectric single crystal, full matrix parameter, piezoelectric property, electromechanical property, sensor

中图分类号:

刘曼曼, 汪跃群, 熊俊杰, 张文杰, 孔舒燕, 杨晓明, 王祖建, 龙西法, 何超. 高居里温度铁电单晶PIN-PT的机电性能[J]. 人工晶体学报, 2022, 51(4): 579-586.

LIU Manman, WANG Yuequn, XIONG Junjie, ZHANG Wenjie, KONG Shuyan, YANG Xiaoming, WANG Zujian, LONG Xifa, HE Chao. Electromechanical Properties of Ferroelectric Single Crystal PIN-PT with High Curie Temperature[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(4): 579-586.

参考文献

[1] ZHANG S J, LI F, JIANG X N, et al. Advantages and challenges of relaxor-PbTiO₃ ferroelectric crystals for electroacoustic transducers-a review[J]. Progress in Materials Science, 2015, 68: 1-66.
[2] SUN E W, CAO W W. Relaxor-based ferroelectric single crystals: growth, domain engineering, characterization and applications[J]. Progress in Materials Science, 2014, 65: 124-210.
[3] LI F, LIN D, CHEN Z, et al. Ultrahigh piezoelectricity in ferroelectric ceramics by design[J]. Nature Materials, 2018, 17(4): 349-354.
[4] 戴振国,董胜明,尹振华,等.PMN-PT晶体的生长、性质和应用进展[J].人工晶体学报,2005,34(6):1018-1023+1055.
DAI Z G, DONG S M, YIN Z H, et al. Progress in the growth, properties and application of PMN-PT crystal[J]. Journal of Synthetic Crystals, 2005, 34(6): 1018-1023+1055(in Chinese).
[5] GUO Y P, LUO H S, HE T H, et al. Peculiar properties of a high Curie temperature Pb(In_1/2Nb_1/2)O₃-PbTiO₃ single crystal grown by the modified Bridgman technique[J]. Solid State Communications, 2002, 123(9): 417-420.
[6] YASUDA N, UEMURA N, OHWA H, et al. Domain observation in PIN-PT mixed crystal near a morphotropic phase boundary[J]. Journal- Korean Physical Society, 2003, 42: S1261-S1265.
[7] HE C, LI X Z, WANG Z J, et al. Characterization of Pb(In_1/2Nb_1/2)O₃-PbTiO₃ ferroelectric crystals grown by top-seeded solution growth method[J]. Journal of Alloys and Compounds, 2012, 539: 17-20.
[8] QIAO H M, HE C, WANG Z J, et al. Improved thermal stability of ferro/piezo-electric properties of Mn-doped Pb(In_1/2Nb_1/2)O₃-PbTiO₃ ceramics[J]. Journal of the European Ceramic Society, 2018, 38(9): 3162-3169.
[9] XIONG J J, WANG Z J, YANG X M, et al. Optimizing the piezoelectric and dielectric properties of Pb(In_1/2Nb_1/2)O₃-PbTiO₃ ferroelectric crystals via alternating current poling waveform[J]. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2021, 68(8): 2775-2780.
[10] MA M, XIA S, SONG K X, et al. Temperature dependence of the transverse piezoelectric properties in the[001]-poled 0.25Pb(In_1/2Nb_1/2)O₃-0.42Pb(Mg_1/3Nb_2/3)O₃-0.33PbTiO₃ single crystal with alternating current treatment[J]. Journal of Applied Physics, 2021, 129(11): 114102.
[11] QIAO L, LI Q, QIU C R, et al. Temperature dependence of elastic, piezoelectric, and dielectric matrixes of [001]-poled rhombohedral PIN-PMN-PT single crystals[J]. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2019, 66(11): 1786-1792.
[12] WAN H T, LUO C T, CHANG W Y, et al. Effect of poling temperature on piezoelectric and dielectric properties of 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ single crystals under alternating current poling[J]. Applied Physics Letters, 2019, 114(17): 172901.
[13] 张沛霖,张仲渊.压电测量[M].北京:国防工业出版社,1983.
ZHANG P L, ZHANG Z Y. Piezoelectric measurement[M].Beijing: National Defense Industry Press, 1983(in Chinese).
[14] HE C, WANG Z J, YANG X M, et al. Relaxor-based ferroelectric single crystals grown by top-seeded solution growth method[J]. Scientia Sinica Technologica, 2017, 47(11): 1126-1138.
[15] AUGIER C, PHAMTHI M, DAMMAK H, et al. Phase diagram of high T_c Pb(In_1/2Nb_1/2)O₃-PbTiO₃ ceramics[J]. Journal of the European Ceramic Society, 2005, 25(12): 2429-2432.
[16] LIU M M, TANG H Y, ZHANG W J, et al. Complete set of material constants of 001-poled 0.72Pb(Mg_1/3Nb_2/3)O₃-0.28PbTiO₃ single crystals using alternating current poling[J]. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2022. DOI: 10.1109/TUFFC.2022.3141461.
[17] IEEE standard for relaxor-based single crystals for transducer and actuator applications[J]. IEEE Std 1859-2017, 2017: 1-25.