n型GaAs欧姆接触电极制备工艺

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (4): 606-610.

n型GaAs欧姆接触电极制备工艺

左芬, 翟章印

淮阴师范学院物理系,淮安 223300

收稿日期:2021-12-10 出版日期:2022-04-15 发布日期:2022-05-16
通讯作者: 翟章印,教授。E-mail:zhangyinz@sina.com
作者简介:左芬(1974—),女,江苏省人,博士,副教授。E-mail: zuofen_hy@163.com
基金资助:
江苏省自然科学基金(BK20140450); 江苏省高校自然科学基金重大项目(19KJA150011)

Preparation Process of n-Type GaAs Ohmic Contact Electrode

ZUO Fen, ZHAI Zhangyin

Department of Physics, Huaiyin Normal University, Huai'an 223300, China

Received:2021-12-10 Online:2022-04-15 Published:2022-05-16

摘要/Abstract

摘要： 目前,n型GaAs欧姆接触电极的制备方法以蒸镀法为主,然而该方法具有设备价格高、浪费电极材料的缺点。本文采用离子溅射法制备了n型GaAs的欧姆接触电极AuGeNi/Au,通过优化制备过程,可获得表面光滑平整、成分均匀无偏析的电极层。400 ℃氩气气氛下退火处理后,电极与GaAs之间由肖特基接触变为欧姆接触,极间电阻降为原来的1/20。退火温度在400~500 ℃时可得到很小的比接触电阻率(10^-6 Ω·cm²),有利于半导体器件工作稳定性的提高,降低能耗。退火温度低于400 ℃或高于500 ℃后比接触电阻率都较大,这分别与欧姆接触未形成以及Au-Ge合金的“球聚”有关。该制备方法和过程的优点为:设备成本低、流程简便、节省电极材料,具有良好的经济效益和实用价值,适合科研实验室使用。

关键词: 砷化镓, 半导体, 欧姆接触, 金锗镍合金, 电极材料, 离子溅射, 比接触电阻率

Abstract: At present, the preparation method of the n-type GaAs ohmic contact electrode is mainly based on the evaporation method. However, this method has the disadvantages of high equipment price and waste of electrode materials. Ohmic contact electrode AuGeNi/Au of n-type GaAs was prepared by ion sputtering. By optimizing the preparation process, the electrode layer with smooth surface, uniform composition and no segregation can be obtained. After annealing at 400 ℃ in argon atmosphere, the Schottky contact between the electrode and GaAs changes to ohmic contact, and the resistance between two electrodes decreases to 1/20 of the original. Choosing the appropriate annealing temperature (400 ℃ to 500 ℃), a small contact resistivity (10^-6 Ω·cm²) can be obtained, which can improve the stability of the device and reduce energy consumption. The contact resistivity is higher when the annealing temperature is lower than 400 ℃ or higher than 500 ℃, which is related to the fact that the ohmic contact has not yet formed and the “spheroidization” of Au-Ge alloy, respectively. The preparation method and process have the advantages of low equipment cost, simple process, saving electrode materials, good economic benefits and practical value, and are suitable for scientific research laboratories.

Key words: GaAs, semiconductor, ohmic contact, AuGeNi alloy, electrode material, ion sputtering, contact resistivity

中图分类号:

TN304

左芬, 翟章印. n型GaAs欧姆接触电极制备工艺[J]. 人工晶体学报, 2022, 51(4): 606-610.

ZUO Fen, ZHAI Zhangyin. Preparation Process of n-Type GaAs Ohmic Contact Electrode[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(4): 606-610.

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