气相输运沉积制备c轴择优取向的碘化铋薄膜

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (4): 637-642.

气相输运沉积制备c轴择优取向的碘化铋薄膜

袁文宾^1,2, 钟敏^1,2

1.渤海大学化学与材料工程学院,锦州 121013;
2.辽宁省光电功能材料与检测重点实验室,锦州 121013

收稿日期:2022-01-12 出版日期:2022-04-15 发布日期:2022-05-16
通讯作者: 钟敏,博士,副教授。E-mail:zhongmin@bhu.edu.cn
作者简介:袁文宾(1996—),男,河南省人,硕士研究生。E-mail:1505405685@qq.com
基金资助:
辽宁省教育厅基金(LJKZ1029);国家自然科学基金(61474003)

c-Axis-Oriented BiI₃ Thin Films Prepared by Vapor Transport Deposition

YUAN Wenbin^1,2, ZHONG Min^1,2

1. College of Chemical and Material Engineering, Bohai University, Jinzhou 121013, China;
2. Liaoning Key Laboratory of Optoelectronic Functional Materials Testing and Technology, Jinzhou 121013, China

Received:2022-01-12 Online:2022-04-15 Published:2022-05-16

摘要/Abstract

摘要： 铋基卤化物材料因其无毒和优良的光电性能而显示出巨大的应用潜力。BiI₃作为一种层状重金属半导体,已被用于X射线检测、γ射线检测和压力传感器等领域,最近其作为一种薄膜太阳能电池吸收材料备受关注。本文采用简单的气相输运沉积(VTD)法,以BiI₃晶体粉末作为蒸发源,在玻璃基底上得到高质量c轴择优取向的BiI₃薄膜。并通过研究蒸发源温度和沉积距离对薄膜物相和形貌的影响,分析了BiI₃薄膜择优生长的机理。结果表明VTD法制备的BiI₃薄膜属于三斜晶系,其光学带隙为~1.8 eV。沉积温度对薄膜的择优取向有较大影响,在沉积温度低于270 ℃时,沉积的薄膜具有沿c轴择优取向生长的特点,超过此温度,c轴择优取向生长消失。在衬底温度为250 ℃、沉积距离为15 cm时制备的薄膜结晶性能最好,晶体形貌为片状八面体。

关键词: 碘化铋, 气相输运沉积, 薄膜, 择优取向, 生长机理, 半导体, 二维材料

Abstract: Bismuth based halide materials show great potential because of their non-toxic and excellent photoelectric properties. As a layered heavy metal semiconductor, BiI₃ has been used in X-ray detection, γ-ray detection and pressure sensor. Recently it attracted much attention as an absorbing material for thin film solar cells. In this paper, a simple vapor transport deposition (VTD) method is used to obtain high-quality BiI₃ films with preferred c-axis orientation on glass substrate using BiI₃ crystal powder as evaporation source. By studying the effects of evaporation source temperature and deposition distance on the phase and morphology of BiI₃ thin films, the mechanism of preferential growth of BiI₃ thin films was proposed. The results show that the BiI₃ thin film prepared by VTD method belongs to triclinic crystal system, and its optical band gap is ~1.8 eV. The deposition temperature has a great influence on the preferred orientation of the films. When the deposition temperature is lower than 270 ℃, the deposited thin films have the characteristics of preferred orientation growth along the c-axis. Beyond this temperature, the c-axis preferential orientation is not observed. When the substrate temperature is 250 ℃ and the deposition distance is 15 cm, the thin films have the highest crystallanity and octahedral morphology.

Key words: BiI₃, vapor transport deposition, thin film, preferred orientation, growth mechanism, semiconductor, two-dimensional material

中图分类号:

O484

袁文宾, 钟敏. 气相输运沉积制备c轴择优取向的碘化铋薄膜[J]. 人工晶体学报, 2022, 51(4): 637-642.

YUAN Wenbin, ZHONG Min. c-Axis-Oriented BiI₃ Thin Films Prepared by Vapor Transport Deposition[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(4): 637-642.

参考文献

[1] BRANDT R E, KURCHIN R C, HOYE R L Z, et al. Investigation of bismuth triiodide (BiI₃) for photovoltaic applications[J]. The Journal of Physical Chemistry Letters, 2015, 6(21): 4297-4302.
[2] OWENS A, PEACOCK A. Compound semiconductor radiation detectors[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2004, 531(1/2): 18-37.
[3] GARG A, TOMAR M, GUPTA V. Optical constants of BiI₃ polycrystalline thin films with potential applications in X-ray detectors and photovoltaic cell[C]//Advanced Functional Materials and Devices, 2022.
[4] WU C C, ZHANG Q H, LIU G H, et al. From Pb to Bi: a promising family of Pb-free optoelectronic materials and devices[J]. Advanced Energy Materials, 2020, 10(13): 1902496.
[5] CHANG P H, LI C S, FU F Y, et al. Ultrasensitive photoresponsive devices based on graphene/BiI₃ van der Waals epitaxial heterostructures[J]. Advanced Functional Materials, 2018, 28(23): 1800179.
[6] LEHNER A J, WANG H B, FABINI D H, et al. Electronic structure and photovoltaic application of BiI₃[J]. Applied Physics Letters, 2015, 107(13): 131109.
[7] ARISHIMA S, MURATA K, SAKAMOTO R, et al. Evaporation-rate and substrate-temperature dependence of direct exciton transitions in BiI₃ thin films formed by hot-wall technique on Al₂O₃ substrates[J]. Physica Status Solidi (b), 2018, 255(11): 1800092.
[8] COUTINHO N F, CUCATTI S, MERLO R B, et al. The thermomechanical properties of thermally evaporated bismuth triiodide thin films[J]. Scientific Reports, 2019, 9: 11785.
[9] MENG Y H, MAGRUDER B R, HILLHOUSE H W. On interface recombination, series resistance, and absorber diffusion length in BiI₃ solar cells[J]. Journal of Applied Physics, 2021, 129(13): 133101.
[10] BANIK A, BOHANNAN E W, SWITZER J A. Epitaxial electrodeposition of BiI₃ and topotactic conversion to highly ordered solar light-absorbing perovskite (CH₃NH₃)₃Bi₂I₉[J]. Chemistry of Materials, 2020, 32(19): 8367-8372.
[11] TAO J H, HU X B, XUE J J, et al. Investigation of electronic transport mechanisms in Sb₂Se₃ thin-film solar cells[J]. Solar Energy Materials and Solar Cells, 2019, 197: 1-6.
[12] PAN Y L, HU X B, GUO Y X, et al. Vapor transport deposition of highly efficient Sb₂(S, Se)₃ solar cells via controllable orientation growth[J]. Advanced Functional Materials, 2021, 31(28): 2101476.
[13] LIN L, BOOPATHI K M, DING J, et al. NbSe_x interlayers decrease interfacial recombination in BiI₃-based hybrid solar cells[J]. Flat Chem, 2017, 5: 18-24.
[14] MU D, ZHOU W, LIU Y D, et al. Resolving the intrinsic bandgap and edge effect of BiI₃ film epitaxially grown on graphene[J]. Materials Today Physics, 2021, 20: 100454.
[15] PODRAZA N J, QIU W, HINOJOSA B B, et al. Band gap and structure of single crystal BiI₃: resolving discrepancies in literature[J]. Journal of Applied Physics, 2013, 114(3): 033110.
[16] ZHU Y Y, ZHANG Q P, KAM M, et al. Vapor phase fabrication of three-dimensional arrayed BiI₃ nanosheets for cost-effective solar cells[J]. InfoMat, 2020, 2(5): 975-983.
[17] YASUNAMI T, NAKAMURA M, INAGAKI S, et al. Molecular beam epitaxy of two-dimensional semiconductor BiI₃ films exhibiting sharp exciton absorption[J]. Applied Physics Letters, 2021, 119(24): 243101.