掺锗提高VO2薄膜的相变温度机理研究

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (4): 666-672.

掺锗提高VO₂薄膜的相变温度机理研究

崔景贺, 蒋权伟, 高忙忙, 梁森

宁夏大学材料与新能源学院,宁夏光伏材料重点实验室,银川 750021

收稿日期:2022-01-05 出版日期:2022-04-15 发布日期:2022-05-16
通讯作者: 梁森,博士,副教授。E-mail:liangsen@nxu.edu.cn
作者简介:崔景贺(1995—),男,安徽省人,硕士研究生。E-mail:cuijinghey@163.com
基金资助:
宁夏自然科学基金(2020AAC03005)

Mechanism of Phase Change Temperature of VO₂ Thin Films by Doping Germanium

CUI Jinghe, JIANG Quanwei, GAO Mangmang, LIANG Sen

Key Laboratory of Ningxia for photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan 750021, China

Received:2022-01-05 Online:2022-04-15 Published:2022-05-16

摘要/Abstract

摘要： 二氧化钒(VO₂)作为一种长久以来备受关注的新型可逆相变材料,发展潜力巨大,其相变温度(T_MIT)的调控一直是研究热点。本文主要利用锗离子作为掺杂离子探索其对VO₂薄膜T_MIT的影响,并尝试解释其内部作用机理。在约1 cm²大小抛光的氧化铝薄片上沉积了一系列含不同比例锗离子VO₂薄膜。研究发现锗离子作为掺杂离子确实有利于T_MIT的提高(本课题T_MIT最大可达84.7 ℃)。T_MIT提高的主要原因是锗离子的引入能够强化单斜态V-V二聚体的稳定性,进而增强单斜态的稳定性,使得低温单斜态向四方金红石态转变更加困难。

关键词: 二氧化钒, 薄膜, 相变温度, 二氧化锗, 晶格畸变, 电学性能, V-V二聚体

Abstract: As a new type of reversible phase change material, vanadium dioxide (VO₂) has shown great potential in development with the regulation of its phase change temperature (T_MIT) and were extensively studied. The experiment in this study focuses on exploring the effect of germanium ions on T_MIT of VO₂ thin films and trying to explain the internal mechanism. A series of VO₂ films containing different ratios of germanium ions were deposited on polished alumina sheets. The characterization results show that germanium ions contribute to increasing T_MIT (maximum T_MIT is 84.7 ℃). The main reason for this increase is that germanium ion enhances the stability of monoclinic V-V dimer by increasing the stability of monoclinic V-V dimer, which makes the transition from low-temperature monoclinic state to tetragonal rutile state more difficult.

Key words: vanadium dioxide, thin film, phase change temperature, germanium dioxide, lattice distortion, electrical property, V-V dimer

中图分类号:

O484
TB383.2

崔景贺, 蒋权伟, 高忙忙, 梁森. 掺锗提高VO₂薄膜的相变温度机理研究[J]. 人工晶体学报, 2022, 51(4): 666-672.

CUI Jinghe, JIANG Quanwei, GAO Mangmang, LIANG Sen. Mechanism of Phase Change Temperature of VO₂ Thin Films by Doping Germanium[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(4): 666-672.

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掺锗提高VO₂薄膜的相变温度机理研究

Mechanism of Phase Change Temperature of VO₂ Thin Films by Doping Germanium

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