氮化镓功率电子器件封装技术研究进展

摘要/Abstract

摘要： 氮化镓(GaN)高电子迁移率晶体管(high electron mobility transistor, HEMT)以其击穿场强高、导通电阻低、转换效率高等特点引起科研人员的广泛关注并有望应用于电力电子系统中,但其高功率密度和高频特性给封装技术带来极大挑战。传统硅基电力电子器件封装中寄生电感参数较大,会引起开关振荡等问题,使GaN的优良性能难以充分发挥;另外,封装的热管理能力决定了功率器件的可靠性,若不能很好地解决器件的自热效应,会导致其性能降低,甚至芯片烧毁。本文在阐释传统封装技术应用于氮化镓功率电子器件时产生的开关震荡和热管理问题基础上,详细综述了针对以上问题进行的GaN封装技术研究进展,包括通过优化控制电路、减小电感L_g、提高电阻R_g抑制dv/dt、在栅电极上加入铁氧体磁环、优化PCB布局、提高磁通抵消量等方法解决寄生电感导致的开关振荡、高导热材料金刚石在器件热管理中的应用、器件封装结构改进,以及其他散热技术等。

关键词: 氮化镓, 功率电子器件, 封装技术, 高电子迁移率晶体管, 开关振荡, 散热, 金刚石

Abstract: Gallium nitride (GaN) high electron mobility transistor (HEMT) has attracted much attention due to its high breakdown field strength, low on-resistance and high conversion efficiency, and it is expected to be applied in power electronics systems. However, its high power density and high frequency characteristics bring great challenges to packaging technology. The parasitic inductance parameters in the package of traditional silicon power electronic devices is large, which will cause switch oscillation and other problems, so that the excellent performance of GaN cannot be fully utilized. In addition, the thermal management ability of the package determines the reliability of the power device. If the self-heating effect of the device cannot be well solved, its performance will be reduced, and even the chip will be burned. On the basis of explaining the switching oscillation and thermal management problems caused by traditional packaging technology applied to gallium nitride power electronic devices, the research progress of GaN packaging technology aiming at the above problems are reviewed in detail in this paper, including by optimizing the control circuit, reducing L_g inductancing, improving R_g inhibition of dv/dt, increasing ferrite beads on the gate electrode, PCB layout optimization and increasing magnetic flux offset method to solve the problem of switch oscillation caused by the parasitic inductance, the application of high thermal conductivity material of diamond in devices thermal management, improvement of device package structure and other heat dissipation technologies.

Key words: gallium nitride, power electronic device, packaging technology, high electron mobility transistor, switch oscillation, heat dissipation, diamond

中图分类号:

TN303

冯家驹, 范亚明, 房丹, 邓旭光, 于国浩, 魏志鹏, 张宝顺. 氮化镓功率电子器件封装技术研究进展[J]. 人工晶体学报, 2022, 51(4): 730-749.

FENG Jiaju, FAN Yaming, FANG Dan, DENG Xuguang, YU Guohao, WEI Zhipeng, ZHANG Baoshun. Research Progress of Gallium Nitride Power Electronic Device Packaging Technology[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(4): 730-749.

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