立方氮化硼的研究进展

摘要/Abstract

摘要： 立方氮化硼(c-BN)作为闪锌矿面心立方结构的Ⅲ-Ⅴ族二元化合物,是第三代半导体中禁带宽度最大的材料,还具有高热导率、高硬度、耐高温、耐氧化、化学稳定性好、透光波长范围广、可实现p型或n型掺杂等一系列性能优点,不仅作为超硬磨料在各行业的加工领域有广泛的应用,而且作为极端电子学材料在大功率半导体和光电子器件等领域也具有潜在的应用价值,使其适用于高温、高功率、高压、高频以及强辐射等极端环境。本文综述了历年来国内外制备c-BN晶体和外延生长c-BN薄膜的发展历程,重点关注了生长技术进步和晶体质量提高的代表性成果,并对c-BN的机械性能、光学性能以及电学性能方面的研究进展进行阐述,最后对全文内容进行总结并对c-BN应用所面临的挑战进行展望。

关键词: 立方氮化硼, 晶体, 外延生长, 超硬材料, 超宽禁带半导体

Abstract: As the Ⅲ-Ⅴ binary compound with the face-centered cubic structure of sphalerite, cubic boron nitride (c-BN) exhibits the largest band gap as one of the typical third-generation semiconductors, as well as other excellent properties including high thermal conductivity, high hardness, high-temperature oxidation resistance, chemical stability, wide range of light transmission wavelength, and can be both doped into p-type or n-type. It can be not only widely used as a superhard materials in the processing fields of various industries, but also has potential applications value as extreme electronics materials in high-power semiconductor and optoelectronic devices, making it suitable for extreme environments such as high temperature, high power, high pressure, high frequency and strong radiation. This article reviews the development of c-BN crystal preparation and epitaxial growth of c-BN thin films in recent years, focusing on the progress of growth technology and the improvement of crystal quality, as well as their mechanical, optical and electrical properties. Finally, the paper summarizes the content of the paper and prospects the challenges of c-BN application.

Key words: cubic boron nitride, crystal, epitaxial growth, superhard material, ultra-wide bandgap semiconductor

中图分类号:

刘彩云, 高伟, 殷红. 立方氮化硼的研究进展[J]. 人工晶体学报, 2022, 51(5): 781-800.

LIU Caiyun, GAO Wei, YIN Hong. Research Progress of Cubic Boron Nitride[J]. Journal of Synthetic Crystals, 2022, 51(5): 781-800.

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