人工晶体学报 ›› 2022, Vol. 51 ›› Issue (5): 781-800.
刘彩云, 高伟, 殷红
收稿日期:
2022-03-18
出版日期:
2022-05-15
发布日期:
2022-06-17
通讯作者:
殷 红,博士,教授。E-mail:hyin@jlu.edu.cn
作者简介:
刘彩云(1995—),女,山东省人,博士研究生。E-mail:caiyun18@mails.jlu.edu.cn; 殷 红,博士,吉林大学超硬材料国家重点实验室教授、博士生导师。主要研究方向为超硬多功能材料与器件、低维半导体材料与器件,重点研究立方氮化硼、六方氮化硼等宽禁带多功能材料的大尺寸晶体薄膜制备、性质调控,以及基于这些材料的应用开发等。承担国家自然科学基金委、教育部、吉林省以及企事业单位的多项科技项目。开展了立方氮化硼的异质外延,介质衬底无催化合成大面积六方氮化硼,低维氮化硼纳米结构的表界面与光电性质调控,气敏传感器、功率电子器件和深紫外光电探测器件的制备等工作,多年来一直积极推动氮化硼相关成果的转化。
基金资助:
LIU Caiyun, GAO Wei, YIN Hong
Received:
2022-03-18
Online:
2022-05-15
Published:
2022-06-17
摘要: 立方氮化硼(c-BN)作为闪锌矿面心立方结构的Ⅲ-Ⅴ族二元化合物,是第三代半导体中禁带宽度最大的材料,还具有高热导率、高硬度、耐高温、耐氧化、化学稳定性好、透光波长范围广、可实现p型或n型掺杂等一系列性能优点,不仅作为超硬磨料在各行业的加工领域有广泛的应用,而且作为极端电子学材料在大功率半导体和光电子器件等领域也具有潜在的应用价值,使其适用于高温、高功率、高压、高频以及强辐射等极端环境。本文综述了历年来国内外制备c-BN晶体和外延生长c-BN薄膜的发展历程,重点关注了生长技术进步和晶体质量提高的代表性成果,并对c-BN的机械性能、光学性能以及电学性能方面的研究进展进行阐述,最后对全文内容进行总结并对c-BN应用所面临的挑战进行展望。
中图分类号:
刘彩云, 高伟, 殷红. 立方氮化硼的研究进展[J]. 人工晶体学报, 2022, 51(5): 781-800.
LIU Caiyun, GAO Wei, YIN Hong. Research Progress of Cubic Boron Nitride[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(5): 781-800.
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